Open-circuit voltage analysis of p–i–n type amorphous silicon solar cells deposited at low temperature

doi:10.1088/1674-1056/20/8/087309

Abstract This paper identifies the contributions of p–a–SiC:H layers and i–a–Si:H layers to the open circuit voltage of p–i–n type a–Si:H solar cells deposited at a low temperature of 125 ℃. We find that poor quality p–a–SiC:H films under regular conditions lead to a restriction of open circuit voltage although the band gap of the i-layer varies widely. A significant improvement in open circuit voltage has been obtained by using high quality p–a–SiC:H films optimized at the “low-power regime” under low silane flow rates and high hydrogen dilution conditions.

Keywords: amorphous silicon solar cell low temperature open-circuit voltage

Received: 26 January 2011
Revised: 28 February 2011
Accepted manuscript online:

PACS:	73.61.Jc	(Amorphous semiconductors; glasses)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	88.40.jj	(Silicon solar cells)

Fund: Project supported by the National High Technology Research and Development Program of China (Grant No. 2009AA05Z422), the National Basic Research Program of China (Grant Nos. 2011CBA00705, 2011CBA00706, and 2011CBA00707), and the Natural Science Foundation of Tianjin (Grant No. 08JCZDJC22200).

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Ni Jian(倪牮), Zhang Jian-Jun(张建军), Cao Yu(曹宇), Wang Xian-Bao(王先宝), Li Chao(李超), Chen Xin-Liang(陈新亮), Geng Xin-Hua(耿新华), and Zhao Ying(赵颖) Open-circuit voltage analysis of p–i–n type amorphous silicon solar cells deposited at low temperature 2011 Chin. Phys. B 20 087309

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Open-circuit voltage analysis of p–i–n type amorphous silicon solar cells deposited at low temperature

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