Novel high-voltage power device based on self-adaptive interface charge

doi:10.1088/1674-1056/20/2/027101

Abstract This paper presents a novel high-voltage lateral double diffused metal–oxide semiconductor (LDMOS) with self-adaptive interface charge (SAC) layer and its physical model of the vertical interface electric field. The SAC can be self-adaptive to collect high concentration dynamic inversion holes, which effectively enhance the electric field of dielectric buried layer (E_I) and increase breakdown voltage (BV). The BV and E_I of SAC LDMOS increase to 612 V and 600 V/μm from 204 V and 90.7 V/μm of the conventional silicon-on-insulator, respectively. Moreover, enhancement factors of η which present the enhanced ability of interface charge on E_I are defined and analysed.

Keywords: self-adaptive interface charge inversion holes dielectric layer electric field breakdown voltage

Received: 26 August 2010
Revised: 19 September 2010
Accepted manuscript online:

PACS:	71.10.-w	(Theories and models of many-electron systems)
	73.20.-r	(Electron states at surfaces and interfaces)
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	77.20.Jp

Fund: Projects supported by the National Natural Science Foundation of China (Grant Nos. 60806025 and 60976060), the National Laboratory of Analog Integrated Circuit (Grant No. 9140C0903070904), and the Youth Teacher Foundation of the University of Electronic Science and Technology of China (Grant No. jx0721).

Cite this article:

Wu Li-Juan(吴丽娟), Hu Sheng-Dong(胡盛东), Zhang Bo(张波), and Li Zhao-Ji(李肇基) Novel high-voltage power device based on self-adaptive interface charge 2011 Chin. Phys. B 20 027101

[1]	Merchant S, Arnold E and Baumgart H 1991 Proc. IEEE Int. Symp. Power Semiconductor Devices and IC's (Baltimore: MD, USA) p. 31
[2]	Nakagawa A, Yasuhara N and Baba Y 1991 IEEE Trans. Electron. Devices 38 1650
[3]	Funaki H, Yamaguchi Y and Hirayama K 1998 Proc.10th Int. Symp. Power Semiconductor Devices and IC's (Tokyo: Japan) p. 25
[4]	Qiao M, Zhang B and Li Z J 2007 Acta Phys. Sin. 56 3990 (in Chinese)
[5]	Zhang B, Li Z J, Hu S D and Luo X R 2009 IEEE Trans. Electron. Devices 56 2327
[6]	Li Z J, Zhang B, Luo X R, Hu S D, Fang J, Li Z H, Qiao M and Guo Y F 2007 Proc. International Conference on Communications, Circuits and Systems (Fukuok: Japan) p. 1320
[7]	Hu S D, Zhang B and Li Z J 2009 Chin. Phys. B 18 315
[8]	Luo X R, Zhang B and Li Z J 2007 IEEE Electron. Device Lett. 28 422
[9]	Luo X R, Zhang B and Li Z J 2008 IEEE Electron. Devices 55 1756
[10]	Luo X R, Wang Y G, Deng H and Florin Udrea 2010 Chin. Phys. B 19 077306
[11]	Luo X R, Zhang B and Li Z J 2007 Solid-State Electronics 51 493
[12]	Li Q, Zhang B and Li Z J 2008 Acta Phys. Sin. 57 6565 (in Chinese)
[13]	Duan B X, Huang Y G, Zhang B and Li Z J 2005 Solid-State Electronics 50 480
[14]	TMA MEDICI 4.2. Palo Alto CA: Technology Modeling Associates Inc. endfootnotesize

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