Study on the defect-related emissions in the light self-ion-implanted Si films by a silicon-on-insulator structure

doi:10.1088/1674-1056/20/2/026802

Abstract This paper reports that the Si⁺ self-ion-implantation are conducted on the silicon-on-insulator wafers with the ²⁸Si⁺ doses of 7×10¹², 1×10¹³, 4×10¹³, and 3×10¹⁴ cm^-2, respectively. After the suitable annealing, these samples are characterized by using the photoluminescence technique at different recorded temperatures. Plentiful emission peaks are observed in these implanted silicon-on-insulator samples, including the unwonted intense P' band which exhibits a great potential in the optoelectronic application. These results indicate that severe transformation of the interstitial clusters can be manipulated by the implanting dose at suitable annealing temperatures. The high critical temperatures for the photoluminescence intensity growth of the two signatures are well discussed based on the thermal ionization model of free exciton.

Keywords: self-ion-implantation photoluminescence interstitial cluster silicon-on-insulator

Received: 20 April 2010
Revised: 31 July 2010
Accepted manuscript online:

PACS:	68.35.Dv	(Composition, segregation; defects and impurities)
	78.67.-n	(Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures)
	78.55.Ap	(Elemental semiconductors)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 10964016), the Key Project of the Chinese Ministry of Education (Grant No. 210207), and the Natural Science Foundation of Yunnan University (Grant No. 2009E27Q).

Cite this article:

Wang Chong(王茺), Yang Yu(杨宇), Yang Rui-Dong(杨瑞东), Li Liang(李亮), Xiong Fei(熊飞), and Bao Ji-Ming Study on the defect-related emissions in the light self-ion-implanted Si films by a silicon-on-insulator structure 2011 Chin. Phys. B 20 026802

[1]	Pavesi L 2003 J. Phys.: Condens. Matter 15 R1169
[2]	Hirschman K D, Tsybeskov L, Duttagupta S P and Fauchet P M 1996 Nature 384 338
[3]	Yu X, Seifert W, Vyvenko O F, Wilhelm T and Reiche M 2008 it Appl. Phys. Lett. 93 041108
[4]	Pavesi L, Negro L D, Mazzoleni C, Franzo G and Priolo F 2000 Nature 408 440
[5]	Geis M W, Spector S J, Grein M E, Schulein R T, Yoon J U and Lennon D M 2007 IEEE Photon. Technol. Lett. 19 152
[6]	Green M A, Zhao J, Wang A, Reece P J and Gal M 2001 Nature 412 805
[7]	Davies G, Hayama S, Murin L, Davia C and Karpenko A 2006 it Phys. Rev. B 73 165202
[8]	Ding J N, Wu J X, Yuan N Y, Kan B and Chen X S 2010 Chin. Phys. B 19 077103
[9]	Huang W Q, Wang H X, Jin F and Qin C J 2008 Chin. Phys. B 17 3753
[10]	Liu H X, Zhang H M, Hu H Y and Song J X 2009 Chin. Phys. B 18 734
[11]	Cloutier S G, Kossyrev P A and Xu J M 2005 Nature Mater. 4 887
[12]	Rotem E, Shainline J M and Xu J M 2007 Appl. Phys. Lett. 91 051127
[13]	Recht D, Capasso F and Aziz M J 2009 Appl. Phys. Lett. 94 251113
[14]	Yang Y, Wang C, Yang R D, Li L, Xiong F and Bao J M 2009 Chin. Phys. B 18 4906
[15]	Libertino S, Coffa S and Benton J L 2001 Phys. Rev. B 63 195206
[16]	Bondi R J, Lee S and Hwang G S 2009 Phys. Rev. B 79 104106
[17]	Lee S and Hwang G S 2008 Phys. Rev. B 78 045204
[18]	Richie D A, Kim J, Barr S A, Hazzard K R and Wilkins J W 2004 Phys. Rev. Lett. 92 045501
[19]	Coomer B J, Goss J P, Jones R, Oberg S and Broddon P R 2001 J. Phys.: Condens. Matter 13 L1
[20]	Giri P K 2005 Semicond. Sci. Technol. 20 638
[21]	Coffa S, Libertino S and Spinella C 2000 Appl. Phys. Lett. 76 321
[22]	Kim J, Kirchhoff F, Wilkins J W and Khan F S 2000 Phys. Rev. Lett. 84 503
[23]	Lopez G M and Fiorentini V 2004 Phys. Rev. B 69 155206
[24]	Yu C H, Zhang B, Li Y J, Lu W and Shen X C 2007 Solid State Commun. 142 71
[25]	Bao J M, Charnvanichborikarn S, Yang Y, Tabball M, Shin B, Williams J S, Aziz M J and Capasso F 2008 Proc. SPIE bf 6800 68000T
[26]	Vina L and Cardona M 1984 Phys. Rev. B 29 6739
[27]	Jellison G E, Withrow S P, McCamy J W and Godbole M J 1995 it Phys. Rev. B 52 14607
[28]	Wang C, Li Z F, Chen X M, Liu J M, Liu Z L, Cui H Y, Yang Y and Lu W 2008 Appl. Surf. Sci. 254 4626
[29]	Ibuka S and Tajima M 2002 J. Appl. Phys. 91 5035
[30]	Tajima M and Ibuka S 1998 J. Appl. Phys. 84 2224
[31]	Minaev N S and Mudryi A V 1981 Phys. Stat. Sol. (a) 68 501
[32]	Tajima M, Gosele U, Weber J and Sauer R 1983 Appl. Phys. Lett. 43 270
[33]	Wijarankuia W 1991 J. Appl. Phys. 70 3018
[34]	Yang Y, Bao J M, Wang C and Aziz M J 2010 J. Appl. Phys. 107 123109
[35]	Giri P K, Coffa S and Rimini E 2001 Appl. Phys. Lett. bf 78 291
[36]	Burger N, Thonke K, Sauer R and Pensl G 1984 Phys. Rev. Lett. 52 1645
[37]	Nakamura M and Murakami S 2003 J. Appl. Phys. 94 3075
[38]	Libertino S, Coffa S and Benton J L 2001 Phys. Rev. B 63 195206
[39]	Cowern N E, Mannino G, Stolk P A, Claveri A and Jaraiz M 1999 Phys. Rev. Lett. 82 4460
[40]	Mechedlidze T, Yonenaga I and Suezawa M 2003 Mater. Sci. Semicond. Process. 6 263
[41]	Ikoubovskii K and Adriaenssens G J 2000 Phys. Rev. B bf 61 10174
[42]	Davis G 1989 Phys. Rep. 176 83
[43]	Shah J, Combescot M and Dayem A H 1977 Phys. Rev. Lett. 38 1497

[1]	Thermally enhanced photoluminescence and temperature sensing properties of Sc₂W₃O₁₂:Eu³⁺ phosphors Yu-De Niu(牛毓德), Yu-Zhen Wang(汪玉珍), Kai-Ming Zhu(朱凯明), Wang-Gui Ye(叶王贵), Zhe Feng(冯喆), Hui Liu(柳挥), Xin Yi(易鑫), Yi-Huan Wang(王怡欢), and Xuan-Yi Yuan(袁轩一). Chin. Phys. B, 2023, 32(2): 028703.
[2]	Growth behaviors and emission properties of Co-deposited MAPbI₃ ultrathin films on MoS₂ Siwen You(游思雯), Ziyi Shao(邵子依), Xiao Guo(郭晓), Junjie Jiang(蒋俊杰), Jinxin Liu(刘金鑫), Kai Wang(王凯), Mingjun Li(李明君), Fangping Ouyang(欧阳方平), Chuyun Deng(邓楚芸), Fei Song(宋飞), Jiatao Sun(孙家涛), and Han Huang(黄寒). Chin. Phys. B, 2023, 32(1): 017901.
[3]	Enhanced photoluminescence of monolayer MoS₂ on stepped gold structure Yu-Chun Liu(刘玉春), Xin Tan(谭欣), Tian-Ci Shen(沈天赐), and Fu-Xing Gu(谷付星). Chin. Phys. B, 2022, 31(8): 087803.
[4]	Exploration of structural, optical, and photoluminescent properties of (1-x)NiCo₂O₄/xPbS nanocomposites for optoelectronic applications Zein K Heiba, Mohamed Bakr Mohamed, Noura M Farag, and Ali Badawi. Chin. Phys. B, 2022, 31(6): 067801.
[5]	Effect of different catalysts and growth temperature on the photoluminescence properties of zinc silicate nanostructures grown via vapor-liquid-solid method Ghfoor Muhammad, Imran Murtaza, Rehan Abid, and Naeem Ahmad. Chin. Phys. B, 2022, 31(5): 057801.
[6]	Exciton luminescence and many-body effect of monolayer WS₂ at room temperature Jian-Min Wu(吴建民), Li-Hui Li(黎立辉), Wei-Hao Zheng(郑玮豪), Bi-Yuan Zheng(郑弼元), Zhe-Yuan Xu(徐哲元), Xue-Hong Zhang(张学红), Chen-Guang Zhu(朱晨光), Kun Wu(吴琨), Chi Zhang(张弛), Ying Jiang(蒋英),Xiao-Li Zhu(朱小莉), and Xiu-Juan Zhuang(庄秀娟). Chin. Phys. B, 2022, 31(5): 057803.
[7]	Impact of STI indium implantation on reliability of gate oxide Xiao-Liang Chen(陈晓亮), Tian Chen(陈天), Wei-Feng Sun(孙伟锋), Zhong-Jian Qian(钱忠健), Yu-Dai Li(李玉岱), and Xing-Cheng Jin(金兴成). Chin. Phys. B, 2022, 31(2): 028505.
[8]	Magnetic polaron-related optical properties in Ni(II)-doped CdS nanobelts: Implication for spin nanophotonic devices Fu-Jian Ge(葛付建), Hui Peng(彭辉), Ye Tian(田野), Xiao-Yue Fan(范晓跃), Shuai Zhang(张帅), Xian-Xin Wu(吴宪欣), Xin-Feng Liu(刘新风), and Bing-Suo Zou(邹炳锁). Chin. Phys. B, 2022, 31(1): 017802.
[9]	Pressure- and temperature-dependent luminescence from Tm³⁺ ions doped in GdYTaO₄ Peng-Yu Zhou(周鹏宇), Xiu-Ming Dou(窦秀明), Bao-Quan Sun(孙宝权), Ren-Qin Dou(窦仁琴), Qing-Li Zhang(张庆礼), Bao Liu(刘鲍), Pu-Geng Hou(侯朴赓), Kai-Lin Chi(迟凯粼), and Kun Ding(丁琨). Chin. Phys. B, 2022, 31(1): 017101.
[10]	Controllable preparation and disorder-dependent photoluminescence of morphologically different C₆₀ microcrystals Wen Cui(崔雯), De-Jun Li(李德军), Jin-Liang Guo(郭金良), Lang-Huan Zhao(赵琅嬛), Bing-Bing Liu(刘冰冰), and Shi-Shuai Sun(孙士帅). Chin. Phys. B, 2021, 30(8): 086101.
[11]	Optical spectroscopy study of damage evolution in 6H-SiC by H$_{2}^{ + }$ implantation Yong Wang(王勇), Qing Liao(廖庆), Ming Liu(刘茗), Peng-Fei Zheng(郑鹏飞), Xinyu Gao(高新宇), Zheng Jia(贾政), Shuai Xu(徐帅), and Bing-Sheng Li(李炳生). Chin. Phys. B, 2021, 30(5): 056106.
[12]	Combined effects of carrier scattering and Coulomb screening on photoluminescence in InGaN/GaN quantum well structure with high In content Rui Li(李睿), Ming-Sheng Xu(徐明升), Peng Wang(汪鹏), Cheng-Xin Wang(王成新), Shang-Da Qu(屈尚达), Kai-Ju Shi(时凯居), Ye-Hui Wei(魏烨辉), Xian-Gang Xu(徐现刚), and Zi-Wu Ji(冀子武). Chin. Phys. B, 2021, 30(4): 047801.
[13]	Microstructure, optical, and photoluminescence properties of β -Ga₂O₃ films prepared by pulsed laser deposition under different oxygen partial pressures Rui-Rui Cui(崔瑞瑞), Jun Zhang(张俊), Zi-Jiang Luo(罗子江), Xiang Guo(郭祥), Zhao Ding(丁召), and Chao-Yong Deng(邓朝勇). Chin. Phys. B, 2021, 30(2): 028505.
[14]	Exciton emissions of CdS nanowire array fabricated on Cd foil by the solvothermal method Yong Li(李勇), Peng-Fei Ji(姬鹏飞), Ya-Juan Hao(郝亚娟), Yue-Li Song(宋月丽), Feng-Qun Zhou(周丰群), and Shu-Qing Yuan(袁书卿). Chin. Phys. B, 2021, 30(1): 016104.
[15]	Energy transfer, luminescence properties, and thermal stability of color tunable barium pyrophosphate phosphors Meng-Jiao Xu(徐梦姣), Su-Xia Li(李素霞), Chen-Chen Ji(季辰辰), Wan-Xia Luo(雒晚霞), Lu-Xiang Wang(王鲁香). Chin. Phys. B, 2020, 29(6): 063301.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Study on the defect-related emissions in the light self-ion-implanted Si films by a silicon-on-insulator structure

Cite this article:

Online attention