A novel planar vertical double-diffused metal-oxide- semiconductor field-effect transistor with inhomogeneous floating islands

doi:10.1088/1674-1056/20/12/128501

Abstract A novel planar vertical double-diffused metal-oxide-semiconductor (VDMOS) structure with an ultra-low specific on-resistance (R_on,sp), whose distinctive feature is the use of inhomogeneous floating p-islands in the n-drift region, is proposed. The theoretical limit of its R_on,sp is deduced, the influence of structure parameters on the breakdown voltage (BV) and R_on,sp are investigated, and the optimized results with BV of 83 V and R_on,sp of 54 mOmega cdotmm² are obtained. Simulations show that the inhomogeneous-floating-islands metal-oxide-semiconductor field-effect transistor (MOSFET) has a superior “R_on,sp/BV” trade-off to the conventional VDMOS (a 38% reduction of R_on,sp with the same BV) and the homogeneous-floating-islands MOSFET (a 10% reduction of R_on,sp with the same BV). The inhomogeneous-floating-islands MOSFET also has a much better body-diode characteristic than the superjunction MOSFET. Its reverse recovery peak current, reverse recovery time and reverse recovery charge are about 50, 80 and 40% of those of the superjunction MOSFET, respectively.

Keywords: inhomogeneous floating islands specific on-state resistance breakdown voltage body diode reverse recovery

Received: 23 June 2011
Revised: 10 July 2011
Accepted manuscript online:

PACS:	85.30.Tv	(Field effect devices)
	85.30.De	(Semiconductor-device characterization, design, and modeling)

Fund: Project supported by the National Key Scientific and Technological Project (Grant No. 2011ZX02503-005) and the Fundamental Research Funds for the Central Universities (Grant No. ZYGX2010J038).

Cite this article:

Ren Min(任敏), Li Ze-Hong(李泽宏), Liu Xiao-Long(刘小龙), Xie Jia-Xiong(谢加雄), Deng Guang-Min(邓光敏), and Zhang Bo(张波) A novel planar vertical double-diffused metal-oxide- semiconductor field-effect transistor with inhomogeneous floating islands 2011 Chin. Phys. B 20 128501

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A novel planar vertical double-diffused metal-oxide- semiconductor field-effect transistor with inhomogeneous floating islands

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