Investigation of AlGaN/GaN fluorine plasma treatment enhancement-mode high electronic mobility transistors by frequency-dependent capacitance and conductance analysis

doi:10.1088/1674-1056/20/1/018101

Abstract This paper reports fluorine plasma treatment enhancement-mode HEMTs (high electronic mobility transistors) EHEMTs and conventional depletion-mode HEMTs DHEMTs fabricated on one wafer using separate litho-photography technology. It finds that fluorine plasma etches the AlGaN at a slow rate by capacitance–voltage measurement. Using capacitance–frequency measurement, it finds one type of trap in conventional DHEMTs with $\tau$_T=(0.5–6) ms and D_T= (1–5) × 10¹³ cm^-2·eV^-1. Two types of trap are found in fluorine plasma treatment EHEMTs, fast with τ_T(f)=(0.2–2) μs and slow with $\tau$_T(s)=(0.5–6) ms. The density of trap states evaluated on the EHEMTs is D_T(f)=(1–3) × 10¹² cm^-2·eV^-1 and D_T(s)=(2–6) × 10¹² cm^-2·eV^-1 for the fast and slow traps, respectively. The result shows that the fluorine plasma treatment reduces the slow trap density by about one order, but introduces a new type of fast trap. The slow trap is suggested to be a surface trap, related to the gate leakage current.

Keywords: AlGaN/GaN enhancement-mode high electronic mobility transistors fluorine plasma treatment frequency dependent capacitance and conductance

Received: 11 March 2010
Revised: 07 July 2010
Accepted manuscript online:

PACS:	81.05.Ea	(III-V semiconductors)
	85.30.De	(Semiconductor-device characterization, design, and modeling)
	85.50.-n	(Dielectric, ferroelectric, and piezoelectric devices)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60736033) and the Fundamental Research Funds for the Central Universities (Grant No. JY10000904009).

Cite this article:

Quan Si(全思), Hao Yue(郝跃), Ma Xiao-Hua(马晓华), and Yu Hui-You(于惠游) Investigation of AlGaN/GaN fluorine plasma treatment enhancement-mode high electronic mobility transistors by frequency-dependent capacitance and conductance analysis 2011 Chin. Phys. B 20 018101

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Investigation of AlGaN/GaN fluorine plasma treatment enhancement-mode high electronic mobility transistors by frequency-dependent capacitance and conductance analysis

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