Study of 4H-SiC junction barrier Schottky diode using field guard ring termination

doi:10.1088/1674-1056/19/9/097107

Abstract This paper reports that the 4H-SiC Schottky barrier diode, PiN diode and junction barrier Schottky diode terminated by field guard rings are designed, fabricated and characterised. The measurements for forward and reverse characteristics have been done, and by comparison with each other, it shows that junction barrier Schottky diode has a lower reverse current density than that of the Schottky barrier diode and a higher forward drop than that of the PiN diode. High-temperature annealing is presented in this paper as well to figure out an optimised processing. The barrier height of 0.79 eV is formed with Ti in this work, the forward drop for the Schottky diode is 2.1 V, with an ideality factor of 3.2, and junction barrier Schottky diode with blocking voltage higher than 400 V was achieved by using field guard ring termination.

Keywords: 4H-SiC junction barrier Schottky diode annealing electrical characteristics

Received: 11 January 2010
Revised: 15 March 2010
Accepted manuscript online:

PACS:	7155D
	7330
	7340N

Fund: Project supported by the 13115 Innovation Engineering of Shanxi (Grant No. 2008ZDKG-30).

Cite this article:

Chen Feng-Ping(陈丰平), Zhang Yu-Ming(张玉明), Lü Hong-Liang(吕红亮), Zhang Yi-Men(张义门), and Huang Jian-Hua(黄建华) Study of 4H-SiC junction barrier Schottky diode using field guard ring termination 2010 Chin. Phys. B 19 097107

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Study of 4H-SiC junction barrier Schottky diode using field guard ring termination

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