Parameter analysis for gate metal–oxide–semiconductor structures of ion-implanted 4H silicon carbide metal–semiconductor field-effect transistors
Wang Shou-Guo(王守国)a)†, Zhang Yi-Men(张义门)b), and Zhang Yu-Ming(张玉明)b)
a School of Information Science and Technology, Northwest University, Xi'an 710127, China; b School of Microelectronics, Xidian University, Xi'an 710071, China
Abstract From the theoretical analysis of the thermionic emission model of current–voltage characteristics, this paper extracts the parameters for the gate Schottky contact of two ion-implanted 4H-SiC metal–semiconductor field-effect transistors (sample A and sample B for three and four times multiple ion-implantation channel region respectively) fabricated in the experiment, including the ideality factor, the series resistance, the zero-field barrier height, the interface oxide capacitance, the interface state density distribution, the neutral level of interface states and the fixed space charge density. The methods to improve the interface of the ion-implanted Schottky contact are given at last.
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