Parameter analysis for gate metal–oxide–semiconductor structures of ion-implanted 4H silicon carbide metal–semiconductor field-effect transistors

doi:10.1088/1674-1056/19/9/097106

Abstract From the theoretical analysis of the thermionic emission model of current–voltage characteristics, this paper extracts the parameters for the gate Schottky contact of two ion-implanted 4H-SiC metal–semiconductor field-effect transistors (sample A and sample B for three and four times multiple ion-implantation channel region respectively) fabricated in the experiment, including the ideality factor, the series resistance, the zero-field barrier height, the interface oxide capacitance, the interface state density distribution, the neutral level of interface states and the fixed space charge density. The methods to improve the interface of the ion-implanted Schottky contact are given at last.

Keywords: silicon carbide interface states ion-implantation barrier height

Received: 03 January 2010
Revised: 20 February 2010
Accepted manuscript online:

PACS:	7155D
	7120C
	7320A
	7850G

Cite this article:

Wang Shou-Guo(王守国), Zhang Yi-Men(张义门), and Zhang Yu-Ming(张玉明) Parameter analysis for gate metal–oxide–semiconductor structures of ion-implanted 4H silicon carbide metal–semiconductor field-effect transistors 2010 Chin. Phys. B 19 097106

[1]	Rambach M, Bauer A J and Ryssel H 2008 wxPhys. Status Solidi B245 1315
[2]	Yanagida N, Ishibashi K, Uchiumi S and Inada T 2007 wxNucl. Instrum. Methods Phys. Res. Sect. B257 203
[3]	Audren A, Benyagoub A, Thome L and Garrido F 2008 wxNucl. Instrum. Methods Phys. Res. Sect. B266 2810
[4]	Sundaresan S G, Mahadik N A, Qadri S B and Schreifels J A 2008 wxSolid-State Electron.52 140
[5]	Zhao J H, Tone K, Alexandrov P, Fursin L and Weiner M 2003 wxIEEE Electron Device Lett.24 81
[6]	Hull B A, Sumakeris J J, O'Loughlin M J and Zhang Q C 2008 wxIEEE Trans. Electron Devices 55 1864
[7]	Sui Y, Tsuji T and Cooper J A 2005 wxIEEE Electron Device Lett.26 255
[8]	Matin M, Saha A and Cooper J A 2004 wxIEEE Trans. Electron Devices51 1721
[9]	Watanabe M, Fukushi D, Yano H and Nakajima S 2007 wxCS Mantech. Conf.187
[10]	Hsia H, Tang Z, Caruth D and Becher D 1999 wxIEEE Electron Device Lett.20 245
[11]	Tucker J B, Mitra S, Papanicolaou N and Siripuram A 2002 wxDiamond Relat. Mater.11 392
[12]	Tucker J B, Papanicolaou N, Rao M V and Holland O W 2002 wxDiamond. Relat. Mater. 11 1344
[13]	Katakami S, Ono S and Arai M 2009 wxMater. Sci. Forum600--603 1107
[14]	Tataroglu A and Altindal S 2009 wxJ. Alloys Compd.479 893
[15]	Andrews J M and Lepselter M P 1970 wxSolid-State Electron.13 1015
[16]	Crowell C R and Roberts G I 1969 wxJ. Appl. Phys.40 3727
[17]	Card H C and Rhoderick E H 1971wx J. Phys. D: Appl. Phys.41593
[18]	Cova P, Singh A, Medina A and Masut R A 1998 wxSolid-State Electron.42 477
[19]	Sze S M 1981 Physics of Semiconductor Devices (New York: Wiley) bf7 279
[20]	Pande K P and Shen C C 1982 wxJ. Appl. Phys.53 749
[21]	Ohno T, Onose H and Sugawara Y 1999 wxJ. Electron. Mater.28 180
[22]	Capano M A, Ryu S and Melloch M R 1998 wxJ. Electron. Mater.27 370
[23]	Capano M A, Ryu S and Cooper J A 1999 wxJ. Electron. Mater. 28 214
[24]	Wang J J, Lambers E S, Pearton S J and Ostling M 1998 wxSolid-State Electron.42 2283
[25]	Constantinidis G, Kuzmic J and Michelakis K 1998 wxSolid-State Electron.42 253
[26]	Yang Z D, Du H H and Libera M 1996 wxJ. Mater. Res.10 1441
[27]	Capano M A, Santhakumar R and Das M K 1999 wxElectron. Mater. Conf.210
[28]	Jones K A, Wood M C, Zheleva T S and Kirchner K W 2008 wxJ. Electron. Mater.37 917
[29]	Zhang L, Zhang Y M, Zhang Y M, Han C and Ma Y J 2009 wxChin. Phys. B18 3490

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Parameter analysis for gate metal–oxide–semiconductor structures of ion-implanted 4H silicon carbide metal–semiconductor field-effect transistors

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