Study of a double epi-layers SiC junction barrier Schottky rectifiers embedded P layer in the drift region

doi:10.1088/1674-1056/19/8/087202

Abstract This paper proposes a double epi-layers 4H–SiC junction barrier Schottky rectifier (JBSR) with embedded P layer (EPL) in the drift region. The structure is characterized by the P-type layer formed in the n-type drift layer by epitaxial overgrowth process. The electric field and potential distribution are changed due to the buried P-layer, resulting in a high breakdown voltage (BV) and low specific on-resistance (R_on,sp). The influences of device parameters, such as the depth of the embedded P+ regions, the space between them and the doping concentration of the drift region, etc., on BV and R_on,sp are investigated by simulations, which provides a particularly useful guideline for the optimal design of the device. The results indicate that BV is increased by 48.5% and Baliga's figure of merit (BFOM) is increased by 67.9% compared to a conventional 4H–SiC JBSR.

Keywords: junction barrier Schottky rectifier 4H–SiC breakdown voltage specific on-resistance

Received: 19 October 2009
Revised: 03 March 2010
Accepted manuscript online:

PACS:	84.30.Jc	(Power electronics; power supply circuits)
	61.72.S-	(Impurities in crystals)
	68.55.-a	(Thin film structure and morphology)
	73.30.+y	(Surface double layers, Schottky barriers, and work functions)
	84.70.+p	(High-current and high-voltage technology: power systems; power transmission lines and cables)
	85.30.De	(Semiconductor-device characterization, design, and modeling)

Fund: Project supported by the 13115 Innovation Engineering of Shaanxi Province of China (Grant No. 2008ZDKG-30).

Cite this article:

Song Qing-Wen(宋庆文), Zhang Yu-Ming(张玉明), Zhang Yi-Men(张义门), Zhang Qian(张倩), and LÜ Hong-Liang(吕红亮) Study of a double epi-layers SiC junction barrier Schottky rectifiers embedded P layer in the drift region 2010 Chin. Phys. B 19 087202

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Study of a double epi-layers SiC junction barrier Schottky rectifiers embedded P layer in the drift region

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