Abstract Transport characteristics of single crystal bismuth films on Si(111)-7×7 are found to be metallic or insulating at temperatures below or above TC, respectively. The transition temperature TC decreases as the film thickness increases. By combining thickness dependence of the films resistivity, we find the insulating behaviour results from the states inside film, while the metallic behaviour originates from the interface states. We show that quantum size effect in a Bi film, such as the semimetal-to-semiconductor transition, is only observable at a temperature higher than TC.
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 10874217 and 10427402) and the National Basic Research Program of China (973 Program) (Grant No. 2006CB933000).
Cite this article:
Pang Fei(庞斐), Liang Xue-Jin(梁学锦), Liao Zhao-Liang(廖昭亮), Yin Shu-Li(尹树力), and Chen Dong-Min(陈东敏) Origin of the metallic to insulating transition of an epitaxial Bi(111) film grown on Si(111) 2010 Chin. Phys. B 19 087201
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