CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Influence of geometrical parameters on the behaviour of SiC merged PiN Schottky rectifiers with junction termination extension |
Song Qing-Wen(宋庆文)†, Zhang Yu-Ming(张玉明), Zhang Yi-Men(张义门), Zhang Qian(张倩), Guo Hui(郭辉), Li Zhi-Yun(李志云), and Wang Zhong-Xu(王中旭) |
School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China |
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Abstract This paper investigates the behaviours of 4H--SiC merged PiN Schottky (MPS) rectifiers with junction termination extension (JTE) by extensive numerical simulations. The simulated results show that the present model matches the experimental data very well. The influences of the JTE design parameters such as the doping concentration and length of the JTE on the breakdown characteristics are discussed in detail. Then the temperature sensitivity of the forward behaviour is studied in terms of the different designs of 4H--SiC MPS with JTE, which provides a particularly useful guideline for the optimal design of MPS rectifiers with JTE.
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Received: 17 June 2009
Revised: 24 July 2009
Accepted manuscript online:
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PACS:
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85.30.Kk
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(Junction diodes)
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84.70.+p
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(High-current and high-voltage technology: power systems; power transmission lines and cables)
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85.40.Ry
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(Impurity doping, diffusion and ion implantation technology)
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61.72.S-
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(Impurities in crystals)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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Fund: Project supported by Shaanxi 13115
Innovation Engineering Foundation (Grant No.~2008ZDKG-30) and Pre-research
Project (Grant No.~51308040302). |
Cite this article:
Song Qing-Wen(宋庆文), Zhang Yu-Ming(张玉明), Zhang Yi-Men(张义门), Zhang Qian(张倩), Guo Hui(郭辉), Li Zhi-Yun(李志云), and Wang Zhong-Xu(王中旭) Influence of geometrical parameters on the behaviour of SiC merged PiN Schottky rectifiers with junction termination extension 2010 Chin. Phys. B 19 047201
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[1] |
Callanan R J, Aqarwal A and Burk A 2008 34th Annual Conference of IEEE 2885--2890
|
[2] |
Che Y, Chen L, Lü H L, Wang Y H, Zhang Y M and Zhang Y M 2008 Acta Phys. Sin. 57 3921 (in Chinese)
|
[3] |
Cao Q J, Zhang Y M and Zhang Y M 2008 Chin. Phys. B 17 4622
|
[4] |
Yang L A, Zhang Y M, Yu C L and Zhang Y M 2003 Acta Phys. Sin. 52 302 (in Chinese)
|
[5] |
Alexandrov P , Wright W, Pan M, Weiner M, Jia L and Zhao J H 2003 Solid-State Electron. 47 263
|
[6] |
Kim S C, Bahng W, Kang I H, Joo S J and Kim N K 2008 Proc. 26{th} Int. Conf. Microelectronics Ni\v{s}, Serbia 11--14 May pp.181--184
|
[7] |
Zhao J H, Alexandrow P, Fursin L, Feng Z C and Weiner M 2002 Electron. Lett. 38 1389
|
[8] |
Zhu L, Chow T P, AJones K and Agarwal A 2006 IEEE Trans. Electron Devices 53 363
|
[9] |
Brosselard P, Camara N and Banu V 2008 IEEE Trans. Electron Devices 55 1847
|
[10] |
DESSIS-ISE, 2D Semiconductor Device Simulator} version 10.0 2005 Integrated Systems Engineering}, Zurich
|
[11] |
Sheridan D C, Niu G and Cressler J D 2001 Solid-State Electron. 45 1659
|
[12] |
Mahajan A and Skromme B J 2005 Solid-State Electronics 9 945
|
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