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Chin. Phys. B, 2010, Vol. 19(4): 047201    DOI: 10.1088/1674-1056/19/4/047201
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Influence of geometrical parameters on the behaviour of SiC merged PiN Schottky rectifiers with junction termination extension

Song Qing-Wen(宋庆文), Zhang Yu-Ming(张玉明), Zhang Yi-Men(张义门), Zhang Qian(张倩), Guo Hui(郭辉), Li Zhi-Yun(李志云), and Wang Zhong-Xu(王中旭)
School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
Abstract  This paper investigates the behaviours of 4H--SiC merged PiN Schottky (MPS) rectifiers with junction termination extension (JTE) by extensive numerical simulations. The simulated results show that the present model matches the experimental data very well. The influences of the JTE design parameters such as the doping concentration and length of the JTE on the breakdown characteristics are discussed in detail. Then the temperature sensitivity of the forward behaviour is studied in terms of the different designs of 4H--SiC MPS with JTE, which provides a particularly useful guideline for the optimal design of MPS rectifiers with JTE.
Keywords:  4H--SiC      merged PiN Schottky rectifier      junction termination extension      breakdown      thermal behaviour  
Received:  17 June 2009      Revised:  24 July 2009      Accepted manuscript online: 
PACS:  85.30.Kk (Junction diodes)  
  84.70.+p (High-current and high-voltage technology: power systems; power transmission lines and cables)  
  85.40.Ry (Impurity doping, diffusion and ion implantation technology)  
  61.72.S- (Impurities in crystals)  
  85.30.De (Semiconductor-device characterization, design, and modeling)  
Fund: Project supported by Shaanxi 13115 Innovation Engineering Foundation (Grant No.~2008ZDKG-30) and Pre-research Project (Grant No.~51308040302).

Cite this article: 

Song Qing-Wen(宋庆文), Zhang Yu-Ming(张玉明), Zhang Yi-Men(张义门), Zhang Qian(张倩), Guo Hui(郭辉), Li Zhi-Yun(李志云), and Wang Zhong-Xu(王中旭) Influence of geometrical parameters on the behaviour of SiC merged PiN Schottky rectifiers with junction termination extension 2010 Chin. Phys. B 19 047201

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