The effect of single AlGaN interlayer on the structural properties of GaN epilayers grown on Si (111) substrates
Wu Yu-Xin(吴玉新)a), Zhu Jian-Jun(朱建军)a)†, Zhao De-Gang(赵德刚)a), Liu Zong-Shun(刘宗顺)a), Jiang De-Sheng(江德生)a), Zhang Shu-Ming(张书明)a), Wang Yu-Tian(王玉田)a), Wang Hui (王辉)a), Chen Gui-Feng(陈贵锋)b), and Yang Hui(杨辉)a)c)
a State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China; b Institute of Information Function Materials, Hebei University of Technology, Tianjin 300130, China; c Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125, China
Abstract High-quality and nearly crack-free GaN epitaxial layer was obtained by inserting a single AlGaN interlayer between GaN epilayer and high-temperature AlN buffer layer on Si (111) substrate by metalorganic chemical vapor deposition. This paper investigates the effect of AlGaN interlayer on the structural properties of the resulting GaN epilayer. It confirms from the optical microscopy and Raman scattering spectroscopy that the AlGaN interlayer has a remarkable effect on introducing relative compressive strain to the top GaN layer and preventing the formation of cracks. X-ray diffraction and transmission electron microscopy analysis reveal that a significant reduction in both screw and edge threading dislocations is achieved in GaN epilayer by the insertion of AlGaN interlayer. The process of threading dislocation reduction in both AlGaN interlayer and GaN epilayer is demonstrated.
Received: 18 February 2009
Revised: 17 March 2009
Accepted manuscript online:
Fund: Project supported
by the National Natural Science Foundation of China (Grant Nos
60506001, 60476021, 60576003, 60776047 and 60836003), the National
Basic Research Program of China (Grant No 2007CB936700) and Project
of Technological Research and Developme
Cite this article:
Wu Yu-Xin(吴玉新), Zhu Jian-Jun(朱建军), Zhao De-Gang(赵德刚), Liu Zong-Shun(刘宗顺), Jiang De-Sheng(江德生), Zhang Shu-Ming(张书明), Wang Yu-Tian(王玉田), Wang Hui (王辉), Chen Gui-Feng(陈贵锋), and Yang Hui(杨辉) The effect of single AlGaN interlayer on the structural properties of GaN epilayers grown on Si (111) substrates 2009 Chin. Phys. B 18 4413
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
