Please wait a minute...
Chin. Phys. B, 2008, Vol. 17(6): 2197-2203    DOI: 10.1088/1674-1056/17/6/043
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Prev   Next  

Oxidation of silicon surface with atomic oxygen radical anions

Wang Lian(王莲)a), Song Chong-Fu(宋崇富)a), Sun Jian-Qiu(孙剑秋)a), Hou Ying(侯莹)b), Li Xiao-Guang(李晓光)b), and Li Quan-Xin(李全新)a)†
a Department of Chemical Physics, University of Science & Technology of China, Hefei 230026, China; b Department of Physics, University of Science & Technology of China, Hefei 230026, China
Abstract  The surface oxidation of silicon (Si) wafers by atomic oxygen radical anions (O- anions) and the preparation of metal--oxide--semiconductor (MOS) capacitors on the O--oxidized Si substrates have been examined for the first time. The O- anions are generated from a recently developed O- storage-emission material of [Ca24Al28O64]4+$\cdot$4O- (C12A7-O- for short). After it has been irradiated by an O- anion beam (0.5$\mu$ A/cm2) at 300℃ for 1--10 hours, the Si wafer achieves an oxide layer with a thickness ranging from 8 to 32nm. X-ray photoelectron spectroscopy (XPS) results reveal that the oxide layer is of a mixture of SiO2, Si2O3, and Si2O distributed in different oxidation depths. The features of the MOS capacitor of <Al electrode/SiOx/Si> are investigated by measuring capacitance-voltage (C-V) and current-voltage (I-V) curves. The oxide charge density is about 6.0 $\times$ 1011cm2 derived from the C-V curves. The leakage current density is in the order of 10-6A/cm2 below 4MV/cm, obtained from the $I-V$ curves. The O- anions formed by present method would have potential applications to the oxidation and the surface-modification of materials together with the preparation of semiconductor devices.
Keywords:  O- anions      silicon oxidation      MOS capacitor      electrical properties  
Received:  19 September 2007      Revised:  09 December 2007      Accepted manuscript online: 
PACS:  81.65.Mq (Oxidation)  
  79.60.Bm (Clean metal, semiconductor, and insulator surfaces)  
  84.32.Tt (Capacitors)  
  85.30.Tv (Field effect devices)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No 50772107) and the National High Technology Development Program of China (Grant No 2006AA05Z118).

Cite this article: 

Wang Lian(王莲), Song Chong-Fu(宋崇富), Sun Jian-Qiu(孙剑秋), Hou Ying(侯莹), Li Xiao-Guang(李晓光), and Li Quan-Xin(李全新) Oxidation of silicon surface with atomic oxygen radical anions 2008 Chin. Phys. B 17 2197

[1] Effects of preparation parameters on growth and properties of β-Ga2O3 film
Zi-Hao Chen(陈子豪), Yong-Sheng Wang(王永胜), Ning Zhang(张宁), Bin Zhou(周兵), Jie Gao(高洁), Yan-Xia Wu(吴艳霞), Yong Ma(马永), Hong-Jun Hei(黑鸿君), Yan-Yan Shen(申艳艳), Zhi-Yong He(贺志勇), and Sheng-Wang Yu(于盛旺). Chin. Phys. B, 2023, 32(1): 017301.
[2] Optical and electrical properties of BaSnO3 and In2O3 mixed transparent conductive films deposited by filtered cathodic vacuum arc technique at room temperature
Jian-Ke Yao(姚建可) and Wen-Sen Zhong(钟文森). Chin. Phys. B, 2023, 32(1): 018101.
[3] Slight Co-doping tuned magnetic and electric properties on cubic BaFeO3 single crystal
Shijun Qin(覃湜俊), Bowen Zhou(周博文), Zhehong Liu(刘哲宏), Xubin Ye(叶旭斌), Xueqiang Zhang(张雪强), Zhao Pan(潘昭), and Youwen Long(龙有文). Chin. Phys. B, 2022, 31(9): 097503.
[4] Radiation effects of 50-MeV protons on PNP bipolar junction transistors
Yuan-Ting Huang(黄垣婷), Xiu-Hai Cui(崔秀海), Jian-Qun Yang(杨剑群), Tao Ying(应涛), Xue-Qiang Yu(余雪强), Lei Dong(董磊), Wei-Qi Li(李伟奇), and Xing-Ji Li(李兴冀). Chin. Phys. B, 2022, 31(2): 028502.
[5] Ozone oxidation of 4H-SiC and flat-band voltage stability of SiC MOS capacitors
Zhi-Peng Yin(尹志鹏), Sheng-Sheng Wei(尉升升), Jiao Bai(白娇), Wei-Wei Xie(谢威威), Zhao-Hui Liu(刘兆慧), Fu-Wen Qin(秦福文), and De-Jun Wang(王德君). Chin. Phys. B, 2022, 31(11): 117302.
[6] Achieving high-performance multilayer MoSe2 photodetectors by defect engineering
Jintao Hong(洪锦涛), Fengyuan Zhang(张丰源), Zheng Liu(刘峥), Jie Jiang(蒋杰), Zhangting Wu(吴章婷), Peng Zheng(郑鹏), Hui Zheng(郑辉), Liang Zheng(郑梁), Dexuan Huo(霍德璇), Zhenhua Ni(倪振华), and Yang Zhang(张阳). Chin. Phys. B, 2021, 30(8): 087801.
[7] Characteristics and mechanisms of subthreshold voltage hysteresis in 4H-SiC MOSFETs
Xi-Ming Chen(陈喜明), Bang-Bing Shi(石帮兵), Xuan Li(李轩), Huai-Yun Fan(范怀云), Chen-Zhan Li(李诚瞻), Xiao-Chuan Deng(邓小川), Hai-Hui Luo(罗海辉), Yu-Dong Wu(吴煜东), and Bo Zhang(张波). Chin. Phys. B, 2021, 30(4): 048504.
[8] Characterization of low-resistance ohmic contacts to heavily carbon-doped n-type InGaAsBi films treated by rapid thermal annealing
Shu-Xing Zhou(周书星), Li-Kun Ai(艾立鹍), Ming Qi(齐鸣), An-Huai Xu(徐安怀), Jia-Sheng Yan(颜家圣), Shu-Sen Li(李树森), and Zhi Jin(金智). Chin. Phys. B, 2021, 30(2): 027304.
[9] Suppression of ion migration in perovskite materials by pulse-voltage method
Xue-Yan Wang(王雪岩), Hu Wang(王虎), Luo-Ran Chen(陈烙然), Yu-Chuan Shao(邵宇川), and Jian-Da Shao(邵建达). Chin. Phys. B, 2021, 30(11): 118104.
[10] Understanding of impact of carbon doping on background carrier conduction in GaN
Zhenxing Liu(刘振兴), Liuan Li(李柳暗), Jinwei Zhang(张津玮), Qianshu Wu(吴千树), Yapeng Wang(王亚朋), Qiuling Qiu(丘秋凌), Zhisheng Wu(吴志盛), and Yang Liu(刘扬). Chin. Phys. B, 2021, 30(10): 107201.
[11] Electrical properties of m×n cylindrical network
Zhi-Zhong Tan(谭志中), Zhen Tan(谭震). Chin. Phys. B, 2020, 29(8): 080503.
[12] Influence of Zr50Cu50 thin film metallic glass as buffer layer on the structural and optoelectrical properties of AZO films
Bao-Qing Zhang(张宝庆), Gao-Peng Liu(刘高鹏), Hai-Tao Zong(宗海涛), Li-Ge Fu(付丽歌), Zhi-Fei Wei(魏志飞), Xiao-Wei Yang(杨晓炜), Guo-Hua Cao(曹国华). Chin. Phys. B, 2020, 29(3): 037303.
[13] Structural and electrical properties of carbon-ion-implanted ultrananocrystalline diamond films
Hui Xu(徐辉), Jian-Jun Liu(刘建军), Hai-Tao Ye(叶海涛), D J Coathup, A V Khomich, Xiao-Jun Hu(胡晓君). Chin. Phys. B, 2018, 27(9): 096104.
[14] Transport properties of mixing conduction in CaF2 nanocrystals under high pressure
Ting-Jing Hu(胡廷静), Xiao-Yan Cui(崔晓岩), Jing-Shu Wang(王婧姝), Jun-Kai Zhang(张俊凯), Xue-Fei Li(李雪飞), Jing-Hai Yang(杨景海), Chun-Xiao Gao(高春晓). Chin. Phys. B, 2018, 27(1): 016401.
[15] Degradation behavior of electrical properties of GaInAs (1.0 eV) and GaInAs (0.7 eV) sub-cells of IMM4J solar cells under 1-MeV electron irradiation
Yan-Qing Zhang(张延清), Ming-Xue Huo(霍明学), Yi-Yong Wu(吴宜勇), Cheng-Yue Sun(孙承月), Hui-Jie Zhao(赵慧杰), Hong-Bin Geng(耿洪滨), Shuai Wang(王帅), Ru-Bin Liu(刘如彬), Qiang Sun(孙强). Chin. Phys. B, 2017, 26(8): 088801.
No Suggested Reading articles found!