Oxidation of silicon surface with atomic oxygen radical anions
Wang Lian(王莲)a), Song Chong-Fu(宋崇富)a), Sun Jian-Qiu(孙剑秋)a), Hou Ying(侯莹)b), Li Xiao-Guang(李晓光)b), and Li Quan-Xin(李全新)a)†
a Department of Chemical Physics, University of Science & Technology of China, Hefei 230026, China; b Department of Physics, University of Science & Technology of China, Hefei 230026, China
Abstract The surface oxidation of silicon (Si) wafers by atomic oxygen radical anions (O- anions) and the preparation of metal--oxide--semiconductor (MOS) capacitors on the O--oxidized Si substrates have been examined for the first time. The O- anions are generated from a recently developed O- storage-emission material of [Ca24Al28O64]4+$\cdot$4O- (C12A7-O- for short). After it has been irradiated by an O- anion beam (0.5$\mu$ A/cm2) at 300℃ for 1--10 hours, the Si wafer achieves an oxide layer with a thickness ranging from 8 to 32nm. X-ray photoelectron spectroscopy (XPS) results reveal that the oxide layer is of a mixture of SiO2, Si2O3, and Si2O distributed in different oxidation depths. The features of the MOS capacitor of <Al electrode/SiOx/Si> are investigated by measuring capacitance-voltage (C-V) and current-voltage (I-V) curves. The oxide charge density is about 6.0 $\times$ 1011cm2 derived from the C-V curves. The leakage current density is in the order of 10-6A/cm2 below 4MV/cm, obtained from the $I-V$ curves. The O- anions formed by present method would have potential applications to the oxidation and the surface-modification of materials together with the preparation of semiconductor devices.
Received: 19 September 2007
Revised: 09 December 2007
Accepted manuscript online:
Fund: Project supported by the National
Natural Science Foundation of China (Grant No 50772107) and the
National High Technology Development Program of China (Grant No
2006AA05Z118).
Cite this article:
Wang Lian(王莲), Song Chong-Fu(宋崇富), Sun Jian-Qiu(孙剑秋), Hou Ying(侯莹), Li Xiao-Guang(李晓光), and Li Quan-Xin(李全新) Oxidation of silicon surface with atomic oxygen radical anions 2008 Chin. Phys. B 17 2197
[1]
Effects of preparation parameters on growth and properties of β-Ga2O3 film Zi-Hao Chen(陈子豪), Yong-Sheng Wang(王永胜), Ning Zhang(张宁), Bin Zhou(周兵), Jie Gao(高洁), Yan-Xia Wu(吴艳霞), Yong Ma(马永), Hong-Jun Hei(黑鸿君), Yan-Yan Shen(申艳艳), Zhi-Yong He(贺志勇), and Sheng-Wang Yu(于盛旺). Chin. Phys. B, 2023, 32(1): 017301.
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.