Magnetic and electrical properties of zincblende CrAs
Chen Peng(陈鹏)a)b)† and Takamura Kb)
aSouthWest University, Department of Physics, Chongqing 400715, China; b Research Institute of Electrical Communication, Tohoku University, Sendai, Japan
Abstract This paper reports that 9 nm zincblende CrAs is grown by molecular-beam epitaxy on InAs buffer layer. The zb-CrAs shows ferromagnetism at room temperature and the total magnetic moment $3.09\pm 0.15\,\mu_{\rm B}$ per CrAs unit. The temperature dependence of zb-CrAs resistance $R$ shows metallic behaviour.
Received: 17 March 2007
Revised: 03 December 2007
Accepted manuscript online:
PACS:
75.30.Cr
(Saturation moments and magnetic susceptibilities)
(Molecular, atomic, ion, and chemical beam epitaxy)
Fund: Project
supported by the Key Project of Chinese Ministry of Education (Grant
No 107092), a Foundation for the Author of National Excellent
Doctoral Dissertation of China (Grant No 200728) and a grant from
the Science {\&} Technology Commission, Chongqing,
Cite this article:
Chen Peng(陈鹏) and Takamura K Magnetic and electrical properties of zincblende CrAs 2008 Chin. Phys. B 17 2204
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