Effect of Te doping on superconductivity and charge-density wave in dichalcogenides 2H-NbSe2-xTex (x=0, 0.1, 0.2)
Wang Hong-Tao(王洪涛)a), Li Lin-Jun(李林军)b), Ye De-Shu(叶德枢)a), Cheng Xin-Hong(程新红)a), and Xu Zhu-An(许祝安)b)†
a Department of Physics and Information Science, Wenzhou University, Wenzhou 325027, China; b Department of Physics, Zhejiang University, Hangzhou 310027, China
Abstract Single crystals of Te-doped dichalcogenides 2H-NbSe2-xTex(x = 0, 0.10, 0.20) were grown by vapour transport method. The effect of Te doping on the superconducting and charge-density wave (CDW) transitions has been investigated. The sharp decrease of residual resistance ratio, RRR = R(300K)/R(8K), with increasing Te content was observed, indicating that the disorder in the conducting plane is induced by Te doping. Meanwhile the superconducting transition temperature, Tc, decreases monotonically with Te content. However, the CDW transition temperature, TCDW, shown by a small jump in the temperature dependence of the resistivity near 30 K, increases slightly. The results show that the suppression of superconductivity might be caused by the enhancement of CDW ordering. The disorder has little influence on the CDW ordering.
Received: 09 April 2007
Revised: 23 April 2007
Accepted manuscript online:
PACS:
74.62.Dh
(Effects of crystal defects, doping and substitution)
Fund: Project supported by the Natural Science
Foundation of Zhejiang Province, China (Grant No~Y605106)
and National Basic Research Program
of China (Grant No~2006CB601003).
Cite this article:
Wang Hong-Tao(王洪涛), Li Lin-Jun(李林军), Ye De-Shu(叶德枢), Cheng Xin-Hong(程新红), and Xu Zhu-An(许祝安) Effect of Te doping on superconductivity and charge-density wave in dichalcogenides 2H-NbSe2-xTex (x=0, 0.1, 0.2) 2007 Chinese Physics 16 2471
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