Abstract AlN/GaN superlattice buffer is inserted between GaN epitaxial layer and Si substrate before epitaxial growth of GaN layer. High-quality and crack-free GaN epitaxial layers can be obtained by inserting AlN/GaN superlattice buffer layer. The influence of AlN/GaN superlattice buffer layer on the properties of GaN films are investigated in this paper. One of the important roles of the superlattice is to release tensile strain between Si substrate and epilayer. Raman spectra show a substantial decrease of in-plane tensile strain in GaN layers by using AlN/GaN superlattice buffer layer. Moreover, TEM cross-sectional images show that the densities of both screw and edge dislocations are significantly reduced. The GaN films grown on Si with the superlattice buffer also have better surface morphology and optical properties.
Received: 20 September 2006
Revised: 25 December 2006
Accepted manuscript online:
Fund: Project supported by the National Natural
Foundation of China (Grant No~60136020), the Key Innovation Program
of Chinese Academy of Sciences and the National High Technology
Development Program of China
(Grant No~2002AA305304).
Cite this article:
Liu Zhe(刘喆), Wang Xiao-Liang(王晓亮), Wang Jun-Xi(王军喜), Hu Guo-Xin(胡国新), Guo Lun-Chun(郭伦春), and Li Jin-Min(李晋闽) The influence of AlN/GaN superlattice intermediate layer on the properties of GaN grown on Si(111) substrates 2007 Chinese Physics 16 1467
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