Synthesis of flower-shape clustering GaN nanorods by ammoniating Ga2O3 films

doi:10.1088/1009-1963/16/5/039

Abstract

Abstract Flower-shape clustering GaN nanorods are successfully synthesized on Si(111) substrates through ammoniating Ga₂O₃/ZnO films at 950℃. The as-grown products are characterized by x-ray diffraction (XRD), scanning electron microscope (SEM), field-emission transmission electron microscope (FETEM), Fourier transform infrared spectrum (FTIR) and fluorescence spectrophotometer. The SEM images demonstrate that the products consist of flower-shape clustering GaN nanorods. The XRD indicates that the reflections of the samples can be indexed to the hexagonal GaN phase and HRTEM shows that the nanorods are of pure hexagonal GaN single crystal. The photoluminescence (PL) spectrum indicates that the GaN nanorods have a good emission property. The growth mechanism is also briefly discussed.

Keywords: GaN magnetron sputtering ammoniate

Received: 03 August 2006
Revised: 15 January 2006
Accepted manuscript online:

PACS:	81.16.-c	(Methods of micro- and nanofabrication and processing)
	61.05.cp	(X-ray diffraction)
	68.37.Hk	(Scanning electron microscopy (SEM) (including EBIC))
	78.30.Fs	(III-V and II-VI semiconductors)
	78.55.Cr	(III-V semiconductors)
	81.07.-b	(Nanoscale materials and structures: fabrication and characterization)

Fund: Project supported by the State Key Program of the National Natural Science Foundation of China (Grant No~90201025) and the National Natural Science Foundation of China (Grant No~90301002).

Cite this article:

Xue Shou-Bin(薛守斌), Zhuang Hui-Zhao(庄惠照), Xue Cheng-Shan(薛成山), Hu Li-Jun(胡丽君), Li Bao-Li(李保理), and Zhang Shi-Ying(张士英) Synthesis of flower-shape clustering GaN nanorods by ammoniating Ga₂O₃ films 2007 Chinese Physics 16 1405

[1]	Low-resistance ohmic contacts on InAlN/GaN heterostructures with MOCVD-regrown n⁺-InGaN and mask-free regrowth process Jingshu Guo(郭静姝), Jiejie Zhu(祝杰杰), Siyu Liu(刘思雨), Jielong Liu(刘捷龙), Jiahao Xu(徐佳豪), Weiwei Chen(陈伟伟), Yuwei Zhou(周雨威), Xu Zhao(赵旭), Minhan Mi(宓珉瀚), Mei Yang(杨眉), Xiaohua Ma(马晓华), and Yue Hao(郝跃). Chin. Phys. B, 2023, 32(3): 037303.
[2]	Reverse gate leakage mechanism of AlGaN/GaN HEMTs with Au-free gate Xin Jiang(蒋鑫), Chen-Hao Li(李晨浩), Shuo-Xiong Yang(羊硕雄), Jia-Hao Liang(梁家豪), Long-Kun Lai(来龙坤), Qing-Yang Dong(董青杨), Wei Huang(黄威),Xin-Yu Liu(刘新宇), and Wei-Jun Luo(罗卫军). Chin. Phys. B, 2023, 32(3): 037201.
[3]	Influence of the lattice parameter of the AlN buffer layer on the stress state of GaN film grown on (111) Si Zhen-Zhuo Zhang(张臻琢), Jing Yang(杨静), De-Gang Zhao(赵德刚), Feng Liang(梁锋), Ping Chen(陈平), and Zong-Shun Liu(刘宗顺). Chin. Phys. B, 2023, 32(2): 028101.
[4]	Demonstration and modeling of unipolar-carrier-conduction GaN Schottky-pn junction diode with low turn-on voltage Lijian Guo(郭力健), Weizong Xu(徐尉宗), Qi Wei(位祺), Xinghua Liu(刘兴华), Tianyi Li(李天义), Dong Zhou(周东), Fangfang Ren(任芳芳), Dunjun Chen(陈敦军), Rong Zhang(张荣), Youdou Zheng(郑有炓), and Hai Lu(陆海). Chin. Phys. B, 2023, 32(2): 027302.
[5]	Achieving highly-efficient H₂S gas sensor by flower-like SnO₂-SnO/porous GaN heterojunction Zeng Liu(刘增), Ling Du(都灵), Shao-Hui Zhang(张少辉), Ang Bian(边昂), Jun-Peng Fang(方君鹏), Chen-Yang Xing(邢晨阳), Shan Li(李山), Jin-Cheng Tang(汤谨诚), Yu-Feng Guo(郭宇锋), and Wei-Hua Tang(唐为华). Chin. Phys. B, 2023, 32(2): 020701.
[6]	Effects of preparation parameters on growth and properties of β-Ga₂O₃ film Zi-Hao Chen(陈子豪), Yong-Sheng Wang(王永胜), Ning Zhang(张宁), Bin Zhou(周兵), Jie Gao(高洁), Yan-Xia Wu(吴艳霞), Yong Ma(马永), Hong-Jun Hei(黑鸿君), Yan-Yan Shen(申艳艳), Zhi-Yong He(贺志勇), and Sheng-Wang Yu(于盛旺). Chin. Phys. B, 2023, 32(1): 017301.
[7]	Design optimization of high breakdown voltage vertical GaN junction barrier Schottky diode with high-K/low-K compound dielectric structure Kuiyuan Tian(田魁元), Yong Liu(刘勇), Jiangfeng Du(杜江锋), and Qi Yu(于奇). Chin. Phys. B, 2023, 32(1): 017306.
[8]	Bottom-up approaches to microLEDs emitting red, green and blue light based on GaN nanowires and relaxed InGaN platelets Zhaoxia Bi(毕朝霞), Anders Gustafsson, and Lars Samuelson. Chin. Phys. B, 2023, 32(1): 018103.
[9]	Physical analysis of normally-off ALD Al₂O₃/GaN MOSFET with different substrates using self-terminating thermal oxidation-assisted wet etching technique Cheng-Yu Huang(黄成玉), Jin-Yan Wang(王金延), Bin Zhang(张斌), Zhen Fu(付振), Fang Liu(刘芳), Mao-Jun Wang(王茂俊), Meng-Jun Li(李梦军), Xin Wang(王鑫), Chen Wang(汪晨), Jia-Yin He(何佳音), and Yan-Dong He(何燕冬). Chin. Phys. B, 2022, 31(9): 097401.
[10]	Liquid-phase synthesis of Li₂S and Li₃PS₄ with lithium-based organic solutions Jieru Xu(许洁茹), Qiuchen Wang(王秋辰), Wenlin Yan(闫汶琳), Liquan Chen(陈立泉), Hong Li(李泓), and Fan Wu(吴凡). Chin. Phys. B, 2022, 31(9): 098203.
[11]	Sub-stochiometric MoO_x by radio-frequency magnetron sputtering as hole-selective passivating contacts for silicon heterojunction solar cells Xiufang Yang(杨秀芳), Shengsheng Zhao(赵生盛), Qian Huang(黄茜), Cao Yu(郁超), Jiakai Zhou(周佳凯), Xiaoning Liu(柳晓宁), Xianglin Su(苏祥林),Ying Zhao(赵颖), and Guofu Hou(侯国付). Chin. Phys. B, 2022, 31(9): 098401.
[12]	Mottness, phase string, and high-T_c superconductivity Jing-Yu Zhao(赵靖宇) and Zheng-Yu Weng(翁征宇). Chin. Phys. B, 2022, 31(8): 087104.
[13]	Inertial focusing and rotating characteristics of elliptical and rectangular particle pairs in channel flow Pei-Feng Lin(林培锋), Xiao Hu(胡箫), and Jian-Zhong Lin(林建忠). Chin. Phys. B, 2022, 31(8): 080501.
[14]	Enhancing performance of GaN-based LDs by using GaN/InGaN asymmetric lower waveguide layers Wen-Jie Wang(王文杰), Ming-Le Liao(廖明乐), Jun Yuan(袁浚), Si-Yuan Luo(罗思源), and Feng Huang(黄锋). Chin. Phys. B, 2022, 31(7): 074206.
[15]	Effect of surface plasmon coupling with radiating dipole on the polarization characteristics of AlGaN-based light-emitting diodes Yi Li(李毅), Mei Ge(葛梅), Meiyu Wang(王美玉), Youhua Zhu(朱友华), and Xinglong Guo(郭兴龙). Chin. Phys. B, 2022, 31(7): 077801.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Synthesis of flower-shape clustering GaN nanorods by ammoniating Ga2O3 films

Cite this article:

Online attention

Synthesis of flower-shape clustering GaN nanorods by ammoniating Ga₂O₃ films