Abstract A novel vertical stack heterostructure CMOSFET is investigated, which is structured by strained SiGe/Si with a hole quantum well channel in the compressively strained Si$_{1 - x}$Ge$_{x}$ layer for p-MOSFET and an electron quantum well channel in the tensile strained Si layer for n-MOSFET. The device possesses several advantages including: 1) the integration of electron quantum well channel with hole quantum well channel into the same vertical layer structure; 2) the gate work function modifiability due to the introduction of poly-SiGe as a gate material; 3) better transistor matching; and 4) flexibility of layout design of CMOSFET by adopting exactly the same material lays for both n-channel and p-channel. The MEDICI simulation result shows that p-MOSFET and n-MOSFET have approximately the same matching threshold voltages. Nice performances are displayed in transfer characteristic, transconductance and cut-off frequency. In addition, its operation as an inverter confirms the CMOSFET structured device to be normal and effective in function.
Received: 02 February 2006
Revised: 16 March 2006
Accepted manuscript online:
PACS:
73.40.Lq
(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
(Semiconductor-device characterization, design, and modeling)
Fund: Project supported by the Preresearch from National Ministries and Commissions (Grant Nos 51408061104DZ01, 51439010904DZ0101).
Cite this article:
Jiang Tao (姜涛), Zhang He-Ming (张鹤鸣), Wang Wei (王伟), Hu Hui-Yong (胡辉勇), Dai Xian-Ying (戴显英) Novel vertical stack HCMOSFET with strained SiGe/Si quantum channel 2006 Chinese Physics 15 1339
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