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New embedded DDSCR structure with high holding voltage and high robustness for 12-V applications |
Jie-Yu Li(李婕妤)1,2, Yang Wang(汪洋)1,2,†, Dan-Dan Jia(夹丹丹)1,2, Wei-Peng Wei(魏伟鹏)1,2, and Peng Dong(董鹏)3 |
1 School of Physics and Optoelectronics, Xiangtan University, Xiangtan 411105, China 2 Hunan Engineering Laboratory for Microelectronics, Optoelectronics and System on A Chip, Xiangtan 411105, China 3 SuperESD Microelectronics Technology CO., LTD., Changsha 410100, China |
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Abstract A new dual directional silicon-controlled rectifier based electrostatic discharge (ESD) protection device suitable for 12-V applications is proposed in this paper. The proposed device (NPEMDDSCR) is based on the embedded DDSCR (EMDDSCR) structure, in which the P+ electrode and P+ injection are removed from the inner finger. Compared with the conventional modified DDSCR (MDDSCR), its high holding voltage meets the requirements for applications. Compared with the embedded DDSCR (EMDDSCR), it has good conduction uniformity. The MDDSCR, EMDDSCR, and NPEMDDSCR are fabricated with an identical width in a 0.5-μm CDMOS process. In order to verify and predict the characteristics of the proposed ESD protection device, a transmission line pulse (TLP) testing system and a two-dimensional device simulation platform are used in this work. The measurements demonstrate that the NPEMDDSCR provides improved reliability and higher area efficiency for 12 V or similar applications. The measurement results also show that the NPEMDDSCR provides higher robustness and better latch-up immunity capability.
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Received: 09 May 2020
Revised: 12 June 2020
Accepted manuscript online: 23 June 2020
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PACS:
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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85.30.Rs
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(Thyristors)
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73.40.Lq
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(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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Corresponding Authors:
†Corresponding author. E-mail: wangyang@xtu.edu.cn
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About author: †Corresponding author. E-mail: wangyang@xtu.edu.cn * Project supported by the National Natural Science Foundation of China (Grant Nos. 61704145, 61774129, and 61827812), the Natural Science Foundation of Hunan Province, China (Grant No. 2019JJ50609), and the Key Technology Program of Changsha City, China (Grant No. kq1902042). |
Cite this article:
Jie-Yu Li(李婕妤), Yang Wang(汪洋)†, Dan-Dan Jia(夹丹丹), Wei-Peng Wei(魏伟鹏), and Peng Dong(董鹏) New embedded DDSCR structure with high holding voltage and high robustness for 12-V applications 2020 Chin. Phys. B 29 108501
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