New embedded DDSCR structure with high holding voltage and high robustness for 12-V applications
Jie-Yu Li(李婕妤)1,2, Yang Wang(汪洋)1,2,†, Dan-Dan Jia(夹丹丹)1,2, Wei-Peng Wei(魏伟鹏)1,2, and Peng Dong(董鹏)3
1School of Physics and Optoelectronics, Xiangtan University, Xiangtan 411105, China 2Hunan Engineering Laboratory for Microelectronics, Optoelectronics and System on A Chip, Xiangtan 411105, China 3SuperESD Microelectronics Technology CO., LTD., Changsha 410100, China
A new dual directional silicon-controlled rectifier based electrostatic discharge (ESD) protection device suitable for 12-V applications is proposed in this paper. The proposed device (NPEMDDSCR) is based on the embedded DDSCR (EMDDSCR) structure, in which the P+ electrode and P+ injection are removed from the inner finger. Compared with the conventional modified DDSCR (MDDSCR), its high holding voltage meets the requirements for applications. Compared with the embedded DDSCR (EMDDSCR), it has good conduction uniformity. The MDDSCR, EMDDSCR, and NPEMDDSCR are fabricated with an identical width in a 0.5-μm CDMOS process. In order to verify and predict the characteristics of the proposed ESD protection device, a transmission line pulse (TLP) testing system and a two-dimensional device simulation platform are used in this work. The measurements demonstrate that the NPEMDDSCR provides improved reliability and higher area efficiency for 12 V or similar applications. The measurement results also show that the NPEMDDSCR provides higher robustness and better latch-up immunity capability.
* Project supported by the National Natural Science Foundation of China (Grant Nos. 61704145, 61774129, and 61827812), the Natural Science Foundation of Hunan Province, China (Grant No. 2019JJ50609), and the Key Technology Program of Changsha City, China (Grant No. kq1902042).
Cite this article:
Jie-Yu Li(李婕妤), Yang Wang(汪洋)†, Dan-Dan Jia(夹丹丹), Wei-Peng Wei(魏伟鹏), and Peng Dong(董鹏) New embedded DDSCR structure with high holding voltage and high robustness for 12-V applications 2020 Chin. Phys. B 29 108501
Fig. 1.
Cross-section view of 2-finger DDSCR of (a) MDDSCR, (b) EMDDSCR, and (c) NPEMDDSCR.
Fig. 2.
Equivalent circuit of 2-finger DDSCR of (a) MDDSCR, (b) EMDDSCR, and (c) NPEMDDSCR.
Fig. 3.
TCAD simulated cross section of (a) MDDSCR, (b) EMDDSCR, and (c) NPEMDDSCR.
Fig. 4.
Total current-flow-line at (a) the trigger point, (b) the holding point, and (c) the high ESD current pulse. In the legends of the figure, Si3N4 and SiO2 symbolize Si3N4 and SiO2 respectively. Number 3.43e + 04 equals to 3.43 × 104.
Fig. 5.
Impact ionization of (a) MDDSCR, (b) EMDDSCR, and (c) NPEMDDSCR.
Fig. 6.
Comparisons of TLP characteristic among MDDSCR, EMDDSCR, and NPEMDDSCR.
Device name
Forward/reverse
VBD/V
Vt1/V
Vh/V
It2/A
HBM/kV
MDDSCR
forward
17
19.60
10.40
11.80
17.7
reverse
17
19.50
7.63
13.07
19.6
EMDDSCR
forward
17
19.74
10.60
6.81
10.2
reverse
17
19.61
10.88
6.55
9.8
NPEMDDSCR
forward
17
18.50
14.60
11.70
17.6
reverse
17
19.60
15.19
10.96
16.4
Table 1.
TLP data for MDDSCR, EMDDSCR, and NPEMDDSCR.
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