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Chinese Physics, 2005, Vol. 14(11): 2320-2324    DOI: 10.1088/1009-1963/14/11/029
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Effect of external noise on the dynamical localization of two coupling electrons in quantum dot array

He An-Min (何安民), Duan Su-Qing (段素青), Zhao Xian-Geng (赵宪庚)
Institute of Applied Physics and Computational Mathematics, Beijing 100088, China
Abstract  The effect of external noise, which is characterized by an Ornstein--Uhlenbeck process, on the dynamical localization of two coupling electrons in a quantum dot array under the action of an ac electric field is studied. A numerical solution of the stochastic equations is obtained by averaging over stochastic trajectories. The results show that the external noise may destroy the dynamical localization, but the anti-noise capacity of the system is stronger when the two electrons are localized at the ends of the quantum dot array.
Keywords:  quantum dot      dynamical localization      external noise  
Received:  26 May 2005      Revised:  20 July 2005      Accepted manuscript online: 
PACS:  73.21.La (Quantum dots)  
Fund: Project supported in part by the National Natural Science Foundations of China (Grant No 10274007), and a grant of the China Academy of Engineering and Physics.

Cite this article: 

He An-Min (何安民), Duan Su-Qing (段素青), Zhao Xian-Geng (赵宪庚) Effect of external noise on the dynamical localization of two coupling electrons in quantum dot array 2005 Chinese Physics 14 2320

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