Molecular dynamic simulation of secondary ion emission from an Al sample bombarded with MeV heavy ions
Xue Jian-Ming (薛建明)a, N. Imanishi (今西信嗣)b
a Institute of Heavy Ion Physics, Peking University, Beijing 100871, China; b Department of Nuclear Engineering, Kyoto University, Kyoto 606-8501, Japan
Abstract Sputtering yields and kinetic energy distributions (KED) of Al atomic ions ejected from a pure aluminium sample under MeV silicon ion bombardment were simulated with the molecular dynamic method. Since the electronic energy loss Se is much higher than the nuclear energy loss Sn when the incident ion energy is as high as several MeV, the Se effect was also taken into consideration in the simulation. It was found that the simulated sputtering yield fits well with the experimental data and the electronic energy loss has a slight effect at incident ion energies higher than 4 MeV. The simulated secondary ion KED spectrum is a little lower in the peak energy and narrower in the peak width than that in the experiment.
Received: 14 November 2001
Revised: 14 September 2001
Accepted manuscript online:
PACS:
68.49.Sf
(Ion scattering from surfaces (charge transfer, sputtering, SIMS))
(Atomic, molecular, and ion beam impact and interactions with surfaces)
Fund: Project supported by the National Natural Science Foundation of China.
Cite this article:
Xue Jian-Ming (薛建明), N. Imanishi (今西信嗣) Molecular dynamic simulation of secondary ion emission from an Al sample bombarded with MeV heavy ions 2002 Chinese Physics 11 245
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