Molecular dynamics simulation for the sputtering of an Al2O3 sample bombarded with MeV Si ions
Xue Jian-Ming (薛建明)a， Nobutsugu Imanishi (今西信嗣)b
a Institute of heavy ion physics, Peking University, Beijing 100871, China; b Department of Nuclear Engineering, Kyoto University, Kyoto 606-8501, Japan
Abstract Sputtering yield and kinetic energy distribution (KED) of Al particles from an Al2O3 sample bombarded with 1－5 MeV Si ions have been simulated using the molecular dynamics method. These have also been measured experimentally with a conventional time-of-flight facility. In the simulation, a new interatomic potential specific to the Al2O3 target was developed, and both the nuclear energy loss Sn and electronic energy loss Se were taken into consideration. By carefully adjusting the simulation parameters, the simulated sputtering yields fit well with the experimental results, and the simulated KED of Al particles also fits roughly with the experimental KED after being modified theoretically.
Received: 22 May 2002
Revised: 04 July 2002
Accepted manuscript online:
PACS:
79.20.Rf
(Atomic, molecular, and ion beam impact and interactions with surfaces)
Fund: Project supported by the National Natural Science Foundation of China (Grant No 19805001).
Cite this article:
Xue Jian-Ming (薛建明), Nobutsugu Imanishi (今西信嗣) Molecular dynamics simulation for the sputtering of an Al2O3 sample bombarded with MeV Si ions 2002 Chinese Physics 11 1267
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