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Chinese Physics, 2001, Vol. 10(9): 844-846    DOI: 10.1088/1009-1963/10/9/314
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

COULOMB BLOCKADE OSCILLATIONS OF Si SINGLE-ELECTRON TRANSISTORS

Wang Tai-hong (王太宏), Li Hong-wei (李宏伟), Zhou Jun-ming (周均铭)
Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
Abstract  Coulomb blockade oscillations of Si single-electron transistors, which are fabricated completely by the conventional photolithography technique, have been investigated. Most of the single-electron transistors clearly show Coulomb blockade oscillations and these oscillations can be periodic by applying negative voltages to the in-plane gates. A shift of the peak positions is observed at high temperatures. It is also found that the fluctuation of the peak spacing cannot be neglected.
Keywords:  single-electron tunnelling      Coulomb blockade      quantum dots  
Received:  10 April 2001      Revised:  28 March 2001      Accepted manuscript online: 
PACS:  73.23.Hk (Coulomb blockade; single-electron tunneling)  
  85.35.Gv (Single electron devices)  
  73.63.Kv (Quantum dots)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 69925410 and 19904015).

Cite this article: 

Wang Tai-hong (王太宏), Li Hong-wei (李宏伟), Zhou Jun-ming (周均铭) COULOMB BLOCKADE OSCILLATIONS OF Si SINGLE-ELECTRON TRANSISTORS 2001 Chinese Physics 10 844

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