Abstract Coulomb blockade oscillations of Si single-electron transistors, which are fabricated completely by the conventional photolithography technique, have been investigated. Most of the single-electron transistors clearly show Coulomb blockade oscillations and these oscillations can be periodic by applying negative voltages to the in-plane gates. A shift of the peak positions is observed at high temperatures. It is also found that the fluctuation of the peak spacing cannot be neglected.
Received: 10 April 2001
Revised: 28 March 2001
Accepted manuscript online:
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 69925410 and 19904015).
Cite this article:
Wang Tai-hong (王太宏), Li Hong-wei (李宏伟), Zhou Jun-ming (周均铭) COULOMB BLOCKADE OSCILLATIONS OF Si SINGLE-ELECTRON TRANSISTORS 2001 Chinese Physics 10 844
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