ANALYTICAL MODELING OF THE RECOMBINATION CURRENT IN THE BASE-EMITTER SPACE CHARGE REGION OF HETEROJUNCTION BIPOLAR TRANSISTORS

doi:10.1088/1004-423X/5/12/005

Abstract

Abstract An analytical modeling of the recombination current in the base-emitter space charge region of heterojunction bipolar transistors is derived. The recombination rates as functions of distance in the space charge region are calculated for different hase doping concentrations. The relations between the space charge recombination current and the applied voltage have been determined.

Received: 08 April 1996
Accepted manuscript online:

PACS:	85.30.Pq	(Bipolar transistors)
	85.30.De	(Semiconductor-device characterization, design, and modeling)
	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	72.20.Jv	(Charge carriers: generation, recombination, lifetime, and trapping)
	77.22.Jp	(Dielectric breakdown and space-charge effects)

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YAN BEI-PING (严北平), LUO JIN-SHENG (罗晋生) ANALYTICAL MODELING OF THE RECOMBINATION CURRENT IN THE BASE-EMITTER SPACE CHARGE REGION OF HETEROJUNCTION BIPOLAR TRANSISTORS 1996 Acta Physica Sinica (Overseas Edition) 5 923

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ANALYTICAL MODELING OF THE RECOMBINATION CURRENT IN THE BASE-EMITTER SPACE CHARGE REGION OF HETEROJUNCTION BIPOLAR TRANSISTORS

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