In-situ SiN combined with etch-stop barrier structure for high-frequency AlGaN/GaN HEMT

doi:10.1088/1674-1056/ab7746

Abstract The etch-stop structure including the in-situ SiN and AlGaN/GaN barrier is proposed for high frequency applications. The etch-stop process is realized by placing an in-situ SiN layer on the top of the thin AlGaN barrier. F-based etching can be self-terminated after removing SiN, leaving the AlGaN barrier in the gate region. With this in-situ SiN and thin barrier etch-stop structure, the short channel effect can be suppressed, meanwhile achieving highly precisely controlled and low damage etching process. The device shows a maximum drain current of 1022 mA/mm, a peak transconductance of 459 mS/mm, and a maximum oscillation frequency (f_max) of 248 GHz.

Keywords: AlGaN/GaN in-situ SiN etch-stop barrier

Received: 04 February 2020
Revised: 14 February 2020
Accepted manuscript online:

PACS:	71.55.Eq	(III-V semiconductors)
	73.20.-r	(Electron states at surfaces and interfaces)
	73.50.-h	(Electronic transport phenomena in thin films)

Fund: Project supported by the China Postdoctoral Science Foundation (Grant No. 2018M640957), the Fundamental Research Funds for the Central Universities, China (Grant No. 20101196761), the National Natural Science Foundation of China (Grant No. 61904135), and the National Defense Pre-Research Foundation of China (Grant No. 31513020307).

Corresponding Authors: Min-Han Mi
E-mail: miminhan@qq.com

Cite this article:

Min-Han Mi(宓珉瀚), Sheng Wu(武盛), Ling Yang(杨凌), Yun-Long He(何云龙), Bin Hou(侯斌), Meng Zhang(张濛), Li-Xin Guo(郭立新), Xiao-Hua Ma(马晓华), Yue Hao(郝跃) In-situ SiN combined with etch-stop barrier structure for high-frequency AlGaN/GaN HEMT 2020 Chin. Phys. B 29 047104

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In-situ SiN combined with etch-stop barrier structure for high-frequency AlGaN/GaN HEMT

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