Chin. Phys. B
Citation Search Quick Search
Chin. Phys. B  2019, Vol. 28 Issue (8): 087302    DOI: 10.1088/1674-1056/28/8/087302
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Effects of active layer thickness on performance and stability of dual-active-layer amorphous InGaZnO thin-film transistors
Wenxing Huo(霍文星)1,2, Zengxia Mei(梅增霞)1, Yicheng Lu(卢毅成)3, Zuyin Han(韩祖银)1,2, Rui Zhu(朱锐)1,2, Tao Wang(王涛)1,2, Yanxin Sui(隋妍心)1,2, Huili Liang(梁会力)1, Xiaolong Du(杜小龙)1,4
1 Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China;
3 Department of Electrical and Computer Engineering, Rutgers University, 94 Brett Rd, Piscataway, New Jersey 08854;
4 Songshan Lake Materials Laboratory, Dongguan 523808, China

Copyright © the Chinese Physical Society
Address: Institute of Physics, Chinese Academy of Sciences, P. O. Box 603,Beijing 100190 China(100190)
Tel: 010-82649026   Fax: 010-82649027   E-Mail: cpb@aphy.iphy.ac.cn
Supported by Beijing Magtech Co. Ltd. Tel: 86-010-62662699 E-mail: support@magtech.com.cn