Influence of white light illumination on the performance of a-IGZO thin film transistor under positive gate-bias stress

doi:10.1088/1674-1056/24/8/088504

Abstract The influence of white light illumination on the stability of an amorphous InGaZnO thin film transistor is investigated in this work. Under prolonged positive gate bias stress, the device illuminated by white light exhibits smaller positive threshold voltage shift than the device stressed under dark. There are simultaneous degradations of field-effect mobility for both stressed devices, which follows a similar trend to that of the threshold voltage shift. The reduced threshold voltage shift under illumination is explained by a competition between bias-induced interface carrier trapping effect and photon-induced carrier detrapping effect. It is further found that white light illumination could even excite and release trapped carriers originally exiting at the device interface before positive gate bias stress, so that the threshold voltage could recover to an even lower value than that in an equilibrium state. The effect of photo-excitation of oxygen vacancies within the a-IGZO film is also discussed.

Keywords: amorphous indium gallium zinc oxide illumination detrapping effect thin film transistors interface states

Received: 11 December 2014
Revised: 11 March 2015
Accepted manuscript online:

PACS:	85.40.-e	(Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology)
	73.61.Jc	(Amorphous semiconductors; glasses)
	85.30.Tv	(Field effect devices)
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

Fund: Project supported by the State Key Program for Basic Research of China (Grant Nos. 2011CB301900 and 2011CB922100) and the Priority Academic Program Development of Higher Education Institutions of Jiangsu Province, China.

Corresponding Authors: Lu Hai
E-mail: hailu@nju.edu.cn

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Tang Lan-Feng (汤兰凤), Yu Guang (于广), Lu Hai (陆海), Wu Chen-Fei (武辰飞), Qian Hui-Min (钱慧敏), Zhou Dong (周东), Zhang Rong (张荣), Zheng You-Dou (郑有炓), Huang Xiao-Ming (黄晓明) Influence of white light illumination on the performance of a-IGZO thin film transistor under positive gate-bias stress 2015 Chin. Phys. B 24 088504

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Influence of white light illumination on the performance of a-IGZO thin film transistor under positive gate-bias stress

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