Improvement in the electrical performance and bias-stress stability of dual-active-layered silicon zinc oxide/zinc oxide thin-film transistor

doi:10.1088/1674-1056/25/8/088503

Abstract Si-doped zinc oxide (SZO) thin films are deposited by using a co-sputtering method, and used as the channel active layers of ZnO-based TFTs with single and dual active layer structures. The effects of silicon content on the optical transmittance of the SZO thin film and electrical properties of the SZO TFT are investigated. Moreover, the electrical performances and bias-stress stabilities of the single- and dual-active-layer TFTs are investigated and compared to reveal the effects of the Si doping and dual-active-layer structure. The average transmittances of all the SZO films are about 90% in the visible light region of 400 nm-800 nm, and the optical band gap of the SZO film gradually increases with increasing Si content. The Si-doping can effectively suppress the grain growth of ZnO, revealed by atomic force microscope analysis. Compared with that of the undoped ZnO TFT, the off-state current of the SZO TFT is reduced by more than two orders of magnitude and it is 1.5×10^-12 A, and thus the on/off current ratio is increased by more than two orders of magnitude. In summary, the SZO/ZnO TFT with dual-active-layer structure exhibits a high on/off current ratio of 4.0×10⁶ and superior stability under gate-bias and drain-bias stress.

Keywords: thin film transistor (TFT) silicon-doped zinc oxide dual-active-layer structure bias-stress stability

Received: 30 January 2016
Revised: 08 April 2016
Accepted manuscript online:

PACS:	85.30.Tv	(Field effect devices)
	73.61.Ga	(II-VI semiconductors)
	72.80.Ey	(III-V and II-VI semiconductors)
	73.20.-r	(Electron states at surfaces and interfaces)

Fund: Projected supported by the National Natural Science Foundation of China (Grant Nos. 61076113 and 61274085), the Natural Science Foundation of Guangdong Province (Grant No. 2016A030313474), and the University Development Fund (Nanotechnology Research Institute, Grant No. 00600009) of the University of Hong Kong, China.

Corresponding Authors: Yu-Rong Liu
E-mail: phlyr@scut.edu.cn

Cite this article:

Yu-Rong Liu(刘玉荣), Gao-Wei Zhao(赵高位), Pai-To Lai(黎沛涛), Ruo-He Yao(姚若河) Improvement in the electrical performance and bias-stress stability of dual-active-layered silicon zinc oxide/zinc oxide thin-film transistor 2016 Chin. Phys. B 25 088503

[1]	Nomura K, Ohta H, Takagi A, Kamiya T, Hirano M and Hosono H 2004 Nature 432 488
[2]	Brox-Nilsen C, Jin J, Luo Y, Bao P and Song A M 2013 IEEE Trans. Electron Dev. 60 3424
[3]	Lin C Y, Chien C W, Wu C H, Hsieh H H, Wu C C, Yeh Y H, Cheng C C, Lai C M and Yu M J 2012 IEEE Trans. Electron Dev. 59 1701
[4]	Liu Y, Wu W J, Li B, En Y F, Wang L and Liu Y R 2014 Acta Phys. Sin. 63 098503 (in Chinese)
[5]	Jang K, Raja J, Lee Y J, Kim D and Yi J 2013 IEEE Electron Dev. Lett. 34 1151
[6]	Son D.H, Kim D H, Kim J H, Sung S J, Jung E A and Kang J K 2011 Thin Solid Films 519 6815
[7]	Qian H M, Yu G, Lu H, Wu C F, Tang L F, Zhou D, Ren F F, Zhang R, Zheng Y L and Huang X M 2015 Chin. Phys. B 24 077307
[8]	Lee Y G and Choi W S 2013 Electron. Mater. Lett. 9 719
[9]	Chen Y Y, Wang X, Cai X K, Yuan Z J, Zhu X M, Qiu D J and Wu H Z 2014 Chin. Phys. B 23 026101
[10]	Lee S H, Kim W and Park J S 2013 Thin Solid Films 549 46
[11]	Wu C J, Li X F, Lu J G, Ye Z Z, Zhang J, Zhou T T, Sun R J, Chen L X, Lu B and Pan X H 2013 Appl. Phys. Lett. 103 082109
[12]	Park J C, Kim S, Kim C, Song I, Park Y, Jung U I, Kim D H and Lee J S 2010 Adv. Mater. 22 5512
[13]	Kim C H, Rim Y S and Kim H J 2013 ACS Appl. Mater. Interfaces 5 6108
[14]	Jeong W H, Kim K M, Kim D L, Rim Y S and Kim H J 2012 IEEE Trans. Electron Dev. 59 2149
[15]	Sze S M 1981 Physics of semiconductor devices, 2nd edn. (New York:John Wiley & Sons)
[16]	Seo J S and Bae B S 2014 ACS Appl. Mater. Interfaces 6 15335
[17]	Lee J, Park J S, Pyo Y S, Lee D B, Kim E H, Stryakhilev D, Kim T W, Jin D U and Mo Y G 2009 Appl. Phys. Lett. 95 123502
[18]	Cross R B M and De Souza M M 2006 Appl. Phys. Lett. 89 263513
[19]	Gorrn P, Holzer P, Reidl T, Kowalsky W, Wang J, Weimann T, Hinze P and Kipp S 2007 Appl. Phys. Lett. 90 063502
[20]	Lee S Y, Kim D H, Chong E, Jeon Y W and Kim D H 2011 Appl. Phys. Lett. 98 122105
[21]	Kim D J, Kim D L, Rim Y S, Kim C H, Jeong W H, Lim H S and Kim H J 2012 ACS Appl. Mater. Interfaces 4 4001
[22]	Jeong J K, Yang H W, Jeong J H, Mo Y G and Kim H D 2008 Appl. Phys. Lett. 93 123508
[23]	Liu S B, Park H S, Jeon J H, Choe H H, Seo J H, Yang S and Park S H K 2013 Thin Solid Film 547 263
[24]	Ryu B, Noh H K, Chio E A and Chang K J 2010 Appl. Phys. Lett. 97 022108
[25]	Park J S, Jeong J K, Chung H J, Mo Y G and Kim H D 2008 Appl. Phys. Lett. 92 072104

[1]	High-throughput fabrication and semi-automated characterization of oxide thin film transistors Yanbing Han(韩炎兵), Sage Bauers, Qun Zhang(张群), Andriy Zakutayev. Chin. Phys. B, 2020, 29(1): 018502.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Improvement in the electrical performance and bias-stress stability of dual-active-layered silicon zinc oxide/zinc oxide thin-film transistor

Cite this article:

Online attention