Chin. Phys. B
Citation Search Quick Search

ISSN 1674-1056 (Print)
CN 11-5639/O4
   » About CPB
   » Editorial Board
   » SCI IF
   » Staff
   » Contact
Browse CPB
   » In Press
   » Current Issue
   » Earlier Issues
   » View by Fields
   » Top Downloaded
   » Sci Top Cited
   » Submit an Article
   » Manuscript Tracking
   » Call for Papers
   » Scope
   » Instruction for Authors
   » Copyright Agreement
   » Templates
   » Author FAQs
   » PACS
   » Review Policy
   » Referee Login
   » Referee FAQs
   » Editor in Chief Login
   » Editor Login
   » Office Login
Other articles related with "85.30.-z":
87801 Quan-Jiang Lv, Yi-Hong Zhang, Chang-Da Zheng, Jiang-Dong Gao, Jian-Li Zhang, Jun-Lin Liu
  Analysis of stress-induced inhomogeneous electroluminescence in GaN-based green LEDs grown on mesh-patterned Si (111) substrates with n-type AlGaN layer
    Chin. Phys. B   2020 Vol.29 (8): 87801-087801 [Abstract] (38) [HTML 1 KB] [PDF 946 KB] (33)
47802 Jiang-Dong Gao, Jian-Li Zhang, Zhi-Jue Quan, Jun-Lin Liu, Feng-Yi Jiang
  Dependence of limited radiative recombination rate of InGaN-based light-emitting diode on lattice temperature with high injection
    Chin. Phys. B   2020 Vol.29 (4): 47802-047802 [Abstract] (79) [HTML 1 KB] [PDF 901 KB] (88)
48504 Kang Su, Jing Li, Chang Ge, Xing-Dong Lu, Zhi-Cong Li, Guo-Hong Wang, Jin-Min Li
  Stackable luminescent device integrating blue light emitting diode with red organic light emitting diode
    Chin. Phys. B   2020 Vol.29 (4): 48504-048504 [Abstract] (53) [HTML 1 KB] [PDF 1027 KB] (53)
118501 M Micjan, M Novota, P Telek, M Donoval, M Weis
  Hunting down the ohmic contact of organic field-effect transistor
    Chin. Phys. B   2019 Vol.28 (11): 118501-118501 [Abstract] (77) [HTML 1 KB] [PDF 579 KB] (65)
98503 Xiaolong Cai, Dong Zhou, Liang Cheng, Fangfang Ren, Hong Zhong, Rong Zhang, Youdou Zheng, Hai Lu
  Performance improvement of 4H-SiC PIN ultraviolet avalanche photodiodes with different intrinsic layer thicknesses
    Chin. Phys. B   2019 Vol.28 (9): 98503-098503 [Abstract] (109) [HTML 1 KB] [PDF 1018 KB] (95)
87302 Wenxing Huo, Zengxia Mei, Yicheng Lu, Zuyin Han, Rui Zhu, Tao Wang, Yanxin Sui, Huili Liang, Xiaolong Du
  Effects of active layer thickness on performance and stability of dual-active-layer amorphous InGaZnO thin-film transistors
    Chin. Phys. B   2019 Vol.28 (8): 87302-087302 [Abstract] (169) [HTML 1 KB] [PDF 1824 KB] (86)
48501 Dong-Yan Zhang, Jie Zhang, Xiao-Feng Liu, Sha-Sha Chen, Hui-Wen Li, Ming-Qing Liu, Da-Qian Ye, Du-Xiang Wang
  Effects of hole-injection through side-walls of large V-pits on efficiency droop in Ⅲ-nitride LEDs
    Chin. Phys. B   2019 Vol.28 (4): 48501-048501 [Abstract] (163) [HTML 1 KB] [PDF 701 KB] (84)
127303 Ni Liu, Shu-Xin Li, Ying-Chun Ye, Yan-Li Yao
  Enhanced performance of a solar cell based on a layer-by-layer self-assembled luminescence down-shifting layer of core-shell quantum dots
    Chin. Phys. B   2018 Vol.27 (12): 127303-127303 [Abstract] (155) [HTML 1 KB] [PDF 1727 KB] (114)
128501 Xin Xie, Da-Wei Bi, Zhi-Yuan Hu, Hui-Long Zhu, Meng-Ying Zhang, Zheng-Xuan Zhang, Shi-Chang Zou
  Influence of characteristics' measurement sequence on total ionizing dose effect in PDSOI nMOSFET
    Chin. Phys. B   2018 Vol.27 (12): 128501-128501 [Abstract] (164) [HTML 1 KB] [PDF 1013 KB] (94)
118502 Yu-Jia Li, Hua-Qiang Wu, Bin Gao, Qi-Lin Hua, Zhao Zhang, Wan-Rong Zhang, He Qian
  Impact of variations of threshold voltage and hold voltage of threshold switching selectors in 1S1R crossbar array
    Chin. Phys. B   2018 Vol.27 (11): 118502-118502 [Abstract] (180) [HTML 1 KB] [PDF 528 KB] (105)
98502 Xia Guo, Qiao-Li Liu, Hui-Jun Tian, Chun-Wei Guo, Chong Li, An-Qi Hu, Xiao-Ying He, Hua Wu
  Efficiency-enhanced AlGaInP light-emitting diodes using transparent plasmonic silver nanowires
    Chin. Phys. B   2018 Vol.27 (9): 98502-098502 [Abstract] (150) [HTML 1 KB] [PDF 1335 KB] (166)
87701 Shi-Jian Wu, Fang Wang, Zhi-Chao Zhang, Yi Li, Ye-Mei Han, Zheng-Chun Yang, Jin-Shi Zhao, Kai-Liang Zhang
  High uniformity and forming-free ZnO-based transparent RRAM with HfOx inserting layer
    Chin. Phys. B   2018 Vol.27 (8): 87701-087701 [Abstract] (256) [HTML 1 KB] [PDF 2296 KB] (120)
78503 Tong Zhang, Taofei Pu, Tian Xie, Liuan Li, Yuyu Bu, Xiao Wang, Jin-Ping Ao
  Synthesis of thermally stable HfOxNy as gate dielectric for AlGaN/GaN heterostructure field-effect transistors
    Chin. Phys. B   2018 Vol.27 (7): 78503-078503 [Abstract] (270) [HTML 1 KB] [PDF 1160 KB] (128)
58802 Hui-Xin Qi, Bo-Han Yu, Sai Liu, Miao Zhang, Xiao-Ling Ma, Jian Wang, Fu-Jun Zhang
  Efficient ternary organic solar cells with high absorption coefficient DIB-SQ as the third component
    Chin. Phys. B   2018 Vol.27 (5): 58802-058802 [Abstract] (220) [HTML 1 KB] [PDF 2325 KB] (195)
48501 Ya-Jie Feng, Chong Li, Qiao-Li Liu, Hua-Qiang Wang, An-Qi Hu, Xiao-Ying He, Xia Guo
  Scalability of dark current in silicon PIN photodiode
    Chin. Phys. B   2018 Vol.27 (4): 48501-048501 [Abstract] (197) [HTML 1 KB] [PDF 631 KB] (206)
28501 Meng-Ying Zhang, Zhi-Yuan Hu, Da-Wei Bi, Li-Hua Dai, Zheng-Xuan Zhang
  Enhanced radiation-induced narrow channel effects in 0.13-μm PDSOI nMOSFETs with shallow trench isolation
    Chin. Phys. B   2018 Vol.27 (2): 28501-028501 [Abstract] (165) [HTML 0 KB] [PDF 469 KB] (293)
77303 Fang-Lin Zheng, Cheng-Sheng Liu, Jia-Qi Ren, Yan-Ling Shi, Ya-Bin Sun, Xiao-Jin Li
  Analytical capacitance model for 14 nm FinFET considering dual-k spacer
    Chin. Phys. B   2017 Vol.26 (7): 77303-077303 [Abstract] (210) [HTML 1 KB] [PDF 1849 KB] (529)
37307 Xuefei Li, Xiong Xiong, Yanqing Wu
  Toward high-performance two-dimensional black phosphorus electronic and optoelectronic devices
    Chin. Phys. B   2017 Vol.26 (3): 37307-037307 [Abstract] (281) [HTML 1 KB] [PDF 5935 KB] (407)
28102 I Orak, A Kocyigit, Ş Alındal
  Electrical and dielectric characterization of Au/ZnO/n—Si device depending frequency and voltage
    Chin. Phys. B   2017 Vol.26 (2): 28102-028102 [Abstract] (205) [HTML 1 KB] [PDF 1395 KB] (360)
18504 Shuqin Zhang(张书琴), Renrong Liang(梁仁荣), Jing Wang(王敬), Zhen Tan(谭桢), Jun Xu(许军)
  Heteromaterial-gate line tunnel field-effect transistor based on Si/Ge heterojunction
    Chin. Phys. B   2017 Vol.26 (1): 18504-018504 [Abstract] (178) [HTML 1 KB] [PDF 329 KB] (428)
118503 Kai Lu, Jing Chen, Yuping Huang, Jun Liu, Jiexin Luo, Xi Wang
  Ultra-low temperature radio-frequency performance of partially depleted silicon-on-insulator n-type metal-oxide-semiconductor field-effect transistors with tunnel diode body contact structures
    Chin. Phys. B   2016 Vol.25 (11): 118503-118503 [Abstract] (129) [HTML 1 KB] [PDF 1579 KB] (270)
118504 Libin Liu, Renrong Liang, Bolin Shan, Jun Xu, Jing Wang
  Technology demonstration of a novel poly-Si nanowire thin film transistor
    Chin. Phys. B   2016 Vol.25 (11): 118504-118504 [Abstract] (126) [HTML 1 KB] [PDF 1232 KB] (702)
107302 Shuai Su, Xiao-Chuan Jian, Fang Wang, Ye-Mei Han, Yu-Xian Tian, Xiao-Yang Wang, Hong-Zhi Zhang, Kai-Liang Zhang
  Resistive switching characteristic and uniformity of low-power HfOx-based resistive random access memory with the BN insertion layer
    Chin. Phys. B   2016 Vol.25 (10): 107302-107302 [Abstract] (223) [HTML 1 KB] [PDF 1458 KB] (252)
108503 Shweta Tripathi
  A two-dimensional analytical modeling for channel potential and threshold voltage of short channel triple material symmetrical gate Stack (TMGS) DG-MOSFET
    Chin. Phys. B   2016 Vol.25 (10): 108503-108503 [Abstract] (157) [HTML 1 KB] [PDF 5433 KB] (641)
88502 Zhi-Yuan Lun, Yun Li, Kai Zhao, Gang Du, Xiao-Yan Liu, Yi Wang
  Modeling of trap-assisted tunneling on performance of charge trapping memory with consideration of trap position and energy level
    Chin. Phys. B   2016 Vol.25 (8): 88502-088502 [Abstract] (225) [HTML 1 KB] [PDF 816 KB] (539)
47305 Fan-Yu Liu, Heng-Zhu Liu, Bi-Wei Liu, Yu-Feng Guo
  An analytical model for nanowire junctionless SOI FinFETs with considering three-dimensional coupling effect
    Chin. Phys. B   2016 Vol.25 (4): 47305-047305 [Abstract] (205) [HTML 1 KB] [PDF 663 KB] (566)
38501 Yan-Xiao Zhao, Wan-Rong Zhang, Xin Huang, Hong-Yun Xie, Dong-Yue Jin, Qiang Fu
  Effect of lateral structure parameters of SiGe HBTs on synthesized active inductors
    Chin. Phys. B   2016 Vol.25 (3): 38501-038501 [Abstract] (164) [HTML 0 KB] [PDF 347 KB] (297)
105201 Zhang Xiao-Yu, Tan Ren-Bing, Sun Jian-Dong, Li Xin-Xing, Zhou Yu, Lü Li, Qin Hua
  Investigation of high sensitivity radio-frequency readout circuit based on AlGaN/GaN high electron mobility transistor
    Chin. Phys. B   2015 Vol.24 (10): 105201-105201 [Abstract] (148) [HTML 1 KB] [PDF 1397 KB] (310)
108501 Zhu Jian-Zhuo, Qi Ling-Hui, Du Hui-Jing, Chai Ying-Chun
  Simulation study of the losses and influences of geminate and bimolecular recombination on the performances of bulk heterojunction organic solar cells
    Chin. Phys. B   2015 Vol.24 (10): 108501-108501 [Abstract] (273) [HTML 1 KB] [PDF 1300 KB] (368)
88501 Lü Kai, Chen Jing, Luo Jie-Xin, He Wei-Wei, Huang Jian-Qiang, Chai Zhan, Wang Xi
  Effects of back gate bias on radio-frequency performance in partially depleted silicon-on-inslator nMOSFETs
    Chin. Phys. B   2015 Vol.24 (8): 88501-088501 [Abstract] (149) [HTML 1 KB] [PDF 291 KB] (363)
First page | Prev page | Next page | Last pagePage 1 of 3, 66 records
Copyright © the Chinese Physical Society
Address: Institute of Physics, Chinese Academy of Sciences, P. O. Box 603,Beijing 100190 China(100190)
Tel: 010-82649026   Fax: 010-82649027   E-Mail:
Supported by Beijing Magtech Co. Ltd. Tel: 86-010-62662699 E-mail: