Please wait a minute...
Chin. Phys. B, 2011, Vol. 20(5): 057201    DOI: 10.1088/1674-1056/20/5/057201
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Numerical study on the dependence of ZnO thin-film transistor characteristics on grain boundary position

Zhang An(张安), Zhao Xiao-Ru(赵小如), Duan Li-Bing(段利兵), Liu Jin-Ming(刘金铭), and Zhao Jian-Lin(赵建林)
Key Laboratory of Space Applied Physics and Chemistry of Ministry of Education and College of Science, Northwestern Polytechnical University, Xi'an 710072, China
Abstract  The dependence of transistor characteristics on grain boundary (GB) position in short-channel ZnO thin film transistors (TFTs) has been investigated using two-dimensional numerical simulations. To simulate the device accurately, both tail states and deep-level states are taken into consideration. It is shown that both the transfer and output characteristics of ZnO TFTs change dramatically with varying GB position, which is different from polycrystalline Si (poly-Si) TFTs. By analysing the mechanism of the carrier transportation in the device, it is revealed that the dependence is derived from the degrees of carrier concentration descent and mobility variation with GB position.
Keywords:  grain boundary      ZnO thin film transistors      trap states      simulation  
Received:  15 November 2010      Revised:  04 January 2011      Accepted manuscript online: 
PACS:  72.80.Ey (III-V and II-VI semiconductors)  
  73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))  
  85.30.Tv (Field effect devices)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 50872112) and NPU Foundation for Fundamental Research, China (Grant No. JC201017).

Cite this article: 

Zhang An(张安), Zhao Xiao-Ru(赵小如), Duan Li-Bing(段利兵), Liu Jin-Ming(刘金铭), and Zhao Jian-Lin(赵建林) Numerical study on the dependence of ZnO thin-film transistor characteristics on grain boundary position 2011 Chin. Phys. B 20 057201

[1] Yoon S M, Park S H K, Hwang C S, Chu H Y and Cho K I 2008 Electrochem. Solid-State Lett. 11 J15
[2] Zhang X A, Zhang J W, Zhang W F, Wang D, Bi Z, Bian X M and Hou X 2008 Thin Solid Films 516 3305
[3] Li M, Zhang H Y, Guo C X, Xu J B and Fu X J 2009 Chin. Phys. B 18 5020
[4] Hossain F M, Nishii J, Takagi S, Ohtomo A, Fukumura T, Fujioka H, Ohno H, Koinuma H and Kawasaki M 2003 J. Appl. Phys. 94 7768
[5] Hossain F M, Nishii J, Takagi S, Sugihara T, Ohtomo A, Fukumura T, Koinuma H, Ohno H and Kawasaki M 2004 Phys. E 21 911
[6] Arabshahi H 2009 Modern Phys. Lett. B 23 1101
[7] Zhou Y M, He Y G, Lu A X and Wan Q 2009 Chin. Phys. B 18 3966
[8] Takechi K, Nakata M, Eguchi T, Yamaguchi H and Kaneko S 2009 IEEE Trans. Electron Devices 56 2165
[9] Kashiwaba Y, Sugawara K, Haga K, Watanabe H, Zhang B P and Segawa Y 2002 Thin Solid Films 411 87
[10] Sasa S, Ozaki M, Koike K, Yano M and Inoue M 2006 Appl. Phys. Lett. 89 053502
[11] Kimura M, Satoshi I, Tatsuya S and Tsukasa E 2001 J. Appl. Phys. 89 596
[12] Li Y M, Huang J Y and Lee B S 2008 Semicond. Sci. Technol. 23 015019
[14] Blatter G and Greuter F 1986 Phys. Rev. B 33 3952
[15] Mccluskey M D and Jokela S J 2009 J. Appl. Phys. 106 071101
[16] Huang G Y, Wang C Y and Wang J T 2010 Chin. Phys. B 19 1174
[17] Dimitriadis C A, Economou N A and Coxon P A 1991 Appl. Phys. Lett. 59 172
[18] Dimitriadis C A 1993 J. Appl. Phys. 73 4086
[19] Grovenor C R M 1985 J. Phy. C 18 4079
[20] Wang Y P, Lee W I and Tseng T Y 1996 Appl. Phys. Lett. 69 1807
[21] Carcia P F, Mclean R S, Reilly M H and Nunes G 2003 Appl. Phys. Lett. 82 1117
[22] Kwon S, Bang S, Lee S, Jeon S, Jeong W, Kim H, Gong S C, Chang H J, Park H H and Jeon H 2009 Semicond. Sci. Technol. 24 035015
[23] Norton D P, Heo Y W, Ivill M P, Ip K, Pearton S J, Chisholm M F and Steiner T 2004 Materials Today 7 34
[24] Levinson J, Shepherd F R, ScanlonP J, Westwood W D, Este G and Rider M 1982 J. Appl. Phys. 53 1193
[25] Baccarani G, Ricco B and Spadini G 1978 J. Appl. Phys. 49 5565
[26] Dimitriadis C A, Kimura M, Miyasaka M, Inoue S, Farmakis F V, Brini J and Kamarinos G 2000 Solid-State Electron. 44 2045 endfootnotesize
[1] Abnormal magnetic behavior of prussian blue analogs modified with multi-walled carbon nanotubes
Jia-Jun Mo(莫家俊), Pu-Yue Xia(夏溥越), Ji-Yu Shen(沈纪宇), Hai-Wen Chen(陈海文), Ze-Yi Lu(陆泽一), Shi-Yu Xu(徐诗语), Qing-Hang Zhang(张庆航), Yan-Fang Xia(夏艳芳), Min Liu(刘敏). Chin. Phys. B, 2023, 32(4): 047503.
[2] Micromagnetic study of magnetization reversal in inhomogeneous permanent magnets
Zhi Yang(杨质), Yuanyuan Chen(陈源源), Weiqiang Liu(刘卫强), Yuqing Li(李玉卿), Liying Cong(丛利颖), Qiong Wu(吴琼), Hongguo Zhang(张红国), Qingmei Lu(路清梅), Dongtao Zhang(张东涛), and Ming Yue(岳明). Chin. Phys. B, 2023, 32(4): 047504.
[3] Coexisting lattice contractions and expansions with decreasing thicknesses of Cu (100) nano-films
Simin An(安思敏), Xingyu Gao(高兴誉), Xian Zhang(张弦), Xin Chen(陈欣), Jiawei Xian(咸家伟), Yu Liu(刘瑜), Bo Sun(孙博), Haifeng Liu(刘海风), and Haifeng Song(宋海峰). Chin. Phys. B, 2023, 32(3): 036804.
[4] Intense low-noise terahertz generation by relativistic laser irradiating near-critical-density plasma
Shijie Zhang(张世杰), Weimin Zhou(周维民), Yan Yin(银燕), Debin Zou(邹德滨), Na Zhao(赵娜), Duan Xie(谢端), and Hongbin Zhuo(卓红斌). Chin. Phys. B, 2023, 32(3): 035201.
[5] Quantitative measurement of the charge carrier concentration using dielectric force microscopy
Junqi Lai(赖君奇), Bowen Chen(陈博文), Zhiwei Xing(邢志伟), Xuefei Li(李雪飞), Shulong Lu(陆书龙), Qi Chen(陈琪), and Liwei Chen(陈立桅). Chin. Phys. B, 2023, 32(3): 037202.
[6] Molecular dynamics study of interactions between edge dislocation and irradiation-induced defects in Fe–10Ni–20Cr alloy
Tao-Wen Xiong(熊涛文), Xiao-Ping Chen(陈小平), Ye-Ping Lin(林也平), Xin-Fu He(贺新福), Wen Yang(杨文), Wang-Yu Hu(胡望宇), Fei Gao(高飞), and Hui-Qiu Deng(邓辉球). Chin. Phys. B, 2023, 32(2): 020206.
[7] Experiment and simulation on degradation and burnout mechanisms of SiC MOSFET under heavy ion irradiation
Hong Zhang(张鸿), Hongxia Guo(郭红霞), Zhifeng Lei(雷志锋), Chao Peng(彭超), Zhangang Zhang(张战刚), Ziwen Chen(陈资文), Changhao Sun(孙常皓), Yujuan He(何玉娟), Fengqi Zhang(张凤祁), Xiaoyu Pan(潘霄宇), Xiangli Zhong(钟向丽), and Xiaoping Ouyang(欧阳晓平). Chin. Phys. B, 2023, 32(2): 028504.
[8] Micro-mechanism study of the effect of Cd-free buffer layers ZnXO (X=Mg/Sn) on the performance of flexible Cu2ZnSn(S, Se)4 solar cell
Caixia Zhang(张彩霞), Yaling Li(李雅玲), Beibei Lin(林蓓蓓), Jianlong Tang(唐建龙), Quanzhen Sun(孙全震), Weihao Xie(谢暐昊), Hui Deng(邓辉), Qiao Zheng(郑巧), and Shuying Cheng(程树英). Chin. Phys. B, 2023, 32(2): 028801.
[9] Gyrokinetic simulation of low-n Alfvénic modes in tokamak HL-2A plasmas
Wen-Hao Lin(林文浩), Ji-Quan Li(李继全), J Garcia, and S Mazzi. Chin. Phys. B, 2023, 32(2): 025202.
[10] Different roles of surfaces' interaction on lattice mismatched/matched surfaces in facilitating ice nucleation
Xuanhao Fu(傅宣豪) and Xin Zhou(周昕). Chin. Phys. B, 2023, 32(2): 028202.
[11] Effect of a static pedestrian as an exit obstacle on evacuation
Yang-Hui Hu(胡杨慧), Yu-Bo Bi(毕钰帛), Jun Zhang(张俊), Li-Ping Lian(练丽萍), Wei-Guo Song(宋卫国), and Wei Gao(高伟). Chin. Phys. B, 2023, 32(1): 018901.
[12] Time-resolved K-shell x-ray spectra of nanosecond laser-produced titanium tracer in gold plasmas
Zhencen He(何贞岑), Jiyan Zhang(张继彦), Jiamin Yang(杨家敏), Bing Yan(闫冰), and Zhimin Hu(胡智民). Chin. Phys. B, 2023, 32(1): 015202.
[13] Coercivity enhancement of sintered Nd-Fe-B magnets by grain boundary diffusion with Pr80-xAlxCu20 alloys
Zhe-Huan Jin(金哲欢), Lei Jin(金磊), Guang-Fei Ding(丁广飞), Shuai Guo(郭帅), Bo Zheng(郑波),Si-Ning Fan(樊思宁), Zhi-Xiang Wang(王志翔), Xiao-Dong Fan(范晓东), Jin-Hao Zhu(朱金豪),Ren-Jie Chen(陈仁杰), A-Ru Yan(闫阿儒), Jing Pan(潘晶), and Xin-Cai Liu(刘新才). Chin. Phys. B, 2023, 32(1): 017505.
[14] Adsorption dynamics of double-stranded DNA on a graphene oxide surface with both large unoxidized and oxidized regions
Mengjiao Wu(吴梦娇), Huishu Ma(马慧姝), Haiping Fang(方海平), Li Yang(阳丽), and Xiaoling Lei(雷晓玲). Chin. Phys. B, 2023, 32(1): 018701.
[15] Variational quantum simulation of thermal statistical states on a superconducting quantum processer
Xue-Yi Guo(郭学仪), Shang-Shu Li(李尚书), Xiao Xiao(效骁), Zhong-Cheng Xiang(相忠诚), Zi-Yong Ge(葛自勇), He-Kang Li(李贺康), Peng-Tao Song(宋鹏涛), Yi Peng(彭益), Zhan Wang(王战), Kai Xu(许凯), Pan Zhang(张潘), Lei Wang(王磊), Dong-Ning Zheng(郑东宁), and Heng Fan(范桁). Chin. Phys. B, 2023, 32(1): 010307.
No Suggested Reading articles found!