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Numerical study on the dependence of ZnO thin-film transistor characteristics on grain boundary position |
Zhang An(张安), Zhao Xiao-Ru(赵小如)†, Duan Li-Bing(段利兵), Liu Jin-Ming(刘金铭), and Zhao Jian-Lin(赵建林) |
Key Laboratory of Space Applied Physics and Chemistry of Ministry of Education and College of Science, Northwestern Polytechnical University, Xi'an 710072, China |
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Abstract The dependence of transistor characteristics on grain boundary (GB) position in short-channel ZnO thin film transistors (TFTs) has been investigated using two-dimensional numerical simulations. To simulate the device accurately, both tail states and deep-level states are taken into consideration. It is shown that both the transfer and output characteristics of ZnO TFTs change dramatically with varying GB position, which is different from polycrystalline Si (poly-Si) TFTs. By analysing the mechanism of the carrier transportation in the device, it is revealed that the dependence is derived from the degrees of carrier concentration descent and mobility variation with GB position.
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Received: 15 November 2010
Revised: 04 January 2011
Accepted manuscript online:
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PACS:
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72.80.Ey
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(III-V and II-VI semiconductors)
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73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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85.30.Tv
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(Field effect devices)
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Fund: Project supported by the National Natural Science Foundation of China (Grant No. 50872112) and NPU Foundation for Fundamental Research, China (Grant No. JC201017). |
Cite this article:
Zhang An(张安), Zhao Xiao-Ru(赵小如), Duan Li-Bing(段利兵), Liu Jin-Ming(刘金铭), and Zhao Jian-Lin(赵建林) Numerical study on the dependence of ZnO thin-film transistor characteristics on grain boundary position 2011 Chin. Phys. B 20 057201
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[1] |
Yoon S M, Park S H K, Hwang C S, Chu H Y and Cho K I 2008 Electrochem. Solid-State Lett. 11 J15
|
[2] |
Zhang X A, Zhang J W, Zhang W F, Wang D, Bi Z, Bian X M and Hou X 2008 Thin Solid Films 516 3305
|
[3] |
Li M, Zhang H Y, Guo C X, Xu J B and Fu X J 2009 Chin. Phys. B 18 5020
|
[4] |
Hossain F M, Nishii J, Takagi S, Ohtomo A, Fukumura T, Fujioka H, Ohno H, Koinuma H and Kawasaki M 2003 J. Appl. Phys. 94 7768
|
[5] |
Hossain F M, Nishii J, Takagi S, Sugihara T, Ohtomo A, Fukumura T, Koinuma H, Ohno H and Kawasaki M 2004 Phys. E 21 911
|
[6] |
Arabshahi H 2009 Modern Phys. Lett. B 23 1101
|
[7] |
Zhou Y M, He Y G, Lu A X and Wan Q 2009 Chin. Phys. B 18 3966
|
[8] |
Takechi K, Nakata M, Eguchi T, Yamaguchi H and Kaneko S 2009 IEEE Trans. Electron Devices 56 2165
|
[9] |
Kashiwaba Y, Sugawara K, Haga K, Watanabe H, Zhang B P and Segawa Y 2002 Thin Solid Films 411 87
|
[10] |
Sasa S, Ozaki M, Koike K, Yano M and Inoue M 2006 Appl. Phys. Lett. 89 053502
|
[11] |
Kimura M, Satoshi I, Tatsuya S and Tsukasa E 2001 J. Appl. Phys. 89 596
|
[12] |
Li Y M, Huang J Y and Lee B S 2008 Semicond. Sci. Technol. 23 015019
|
[14] |
Blatter G and Greuter F 1986 Phys. Rev. B 33 3952
|
[15] |
Mccluskey M D and Jokela S J 2009 J. Appl. Phys. 106 071101
|
[16] |
Huang G Y, Wang C Y and Wang J T 2010 Chin. Phys. B 19 1174
|
[17] |
Dimitriadis C A, Economou N A and Coxon P A 1991 Appl. Phys. Lett. 59 172
|
[18] |
Dimitriadis C A 1993 J. Appl. Phys. 73 4086
|
[19] |
Grovenor C R M 1985 J. Phy. C 18 4079
|
[20] |
Wang Y P, Lee W I and Tseng T Y 1996 Appl. Phys. Lett. 69 1807
|
[21] |
Carcia P F, Mclean R S, Reilly M H and Nunes G 2003 Appl. Phys. Lett. 82 1117
|
[22] |
Kwon S, Bang S, Lee S, Jeon S, Jeong W, Kim H, Gong S C, Chang H J, Park H H and Jeon H 2009 Semicond. Sci. Technol. 24 035015
|
[23] |
Norton D P, Heo Y W, Ivill M P, Ip K, Pearton S J, Chisholm M F and Steiner T 2004 Materials Today 7 34
|
[24] |
Levinson J, Shepherd F R, ScanlonP J, Westwood W D, Este G and Rider M 1982 J. Appl. Phys. 53 1193
|
[25] |
Baccarani G, Ricco B and Spadini G 1978 J. Appl. Phys. 49 5565
|
[26] |
Dimitriadis C A, Kimura M, Miyasaka M, Inoue S, Farmakis F V, Brini J and Kamarinos G 2000 Solid-State Electron. 44 2045 endfootnotesize
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