Performance improvement in polymeric thin film transistors using chemically modified both silver bottom contacts and dielectric surfaces

doi:10.1088/1674-1056/24/9/096803

Abstract An efficient interface modification is introduced to improve the performance of polymeric thin film transistors. This efficient interface modification is first achieved by 4-fluorothiophenol (4-FTP) self-assembled monolayers (SAM) to chemically treat the silver source-drain (S/D) contacts while the silicon oxide (SiO₂) dielectric interface is further primed by either hexamethyldisilazane (HMDS) or octyltrichlorosilane (OTS-C8). Results show that contact resistance is the dominant factor that limits the field effect mobility of the PTDPPTFT4 transistors. With proper surface modification applied to both the dielectric surface and the bottom contacts, the field effect mobilities of the bottom-gate bottom-contact PTDPPTFT4 transistors were significantly improved from 0.15 cm²·V^-1·s^-1 to 0.91 cm²·V^-1·s^-1.

Keywords: polymeric thin film transistors orthogonal self-assembly chemically modified gate dielectric chemically modified silver bottom contacts

Received: 13 January 2015
Revised: 04 May 2015
Accepted manuscript online:

PACS:	68.35.bm	(Polymers, organics)
	68.47.De	(Metallic surfaces)
	68.47.Gh	(Oxide surfaces)

Fund: Project supported by the National Basic Research Program of China (Grant No. 2013CB328803).

Corresponding Authors: Fong Hon-Hang
E-mail: hhfong@sjtu.edu.cn

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Xie Ying-Tao (谢应涛), Ouyang Shi-Hong (欧阳世宏), Wang Dong-Ping (王东平), Zhu Da-Long (朱大龙), Xu Xin (许鑫), Tan Te (谭特), Fong Hon-Hang (方汉铿) Performance improvement in polymeric thin film transistors using chemically modified both silver bottom contacts and dielectric surfaces 2015 Chin. Phys. B 24 096803

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Performance improvement in polymeric thin film transistors using chemically modified both silver bottom contacts and dielectric surfaces

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