Chin. Phys. B
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Chin. Phys. B  2018, Vol. 27 Issue (9): 097201    DOI: 10.1088/1674-1056/27/9/097201
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Temperature dependence on the electrical and physical performance of InAs/AlSb heterojunction and high electron mobility transistors
Jing Zhang(张静)1,2, Hongliang Lv(吕红亮)1, Haiqiao Ni(倪海桥)2, Zhichuan Niu(牛智川)2, Yuming Zhang(张玉明)1
1 School of Microelectronics, Xidian University and Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China;
2 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

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