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Temperature dependence on the electrical and physical performance of InAs/AlSb heterojunction and high electron mobility transistors |
Jing Zhang(张静)1,2, Hongliang Lv(吕红亮)1, Haiqiao Ni(倪海桥)2, Zhichuan Niu(牛智川)2, Yuming Zhang(张玉明)1 |
1 School of Microelectronics, Xidian University and Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China;
2 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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Abstract In this report, the effect of temperature on the InAs/AlSb heterojunction and high-electron-mobility transistors (HEMTs) with a gate length of 2 μ are discussed comprehensively. The results indicate that device performance is greatly improved at cryogenic temperatures. It is also observed that the device performance at 90 K is significantly improved with 27% lower gate leakage current, 12% higher maximum drain current, and 22.5% higher peak transconductance compared to 300 K. The temperature dependence of mobility and the two-dimensional electron gas concentration in the InAs/AlSb heterojunction for the temperature range 90 K-300 K is also investigated. The electron mobility at 90 K (42560 cm2/V·s) is 2.5 times higher than its value at 300 K (16911 cm2/V·s) because of the weaker lattice vibration and the impurity ionization at cryogenic temperatures, which corresponds to a reduced scattering rate and higher mobility. We also noted that the two-dimensional electron gas concentration decreases slightly from 1.99×1012 cm-2 at 300 K to 1.7×1012 cm-2 at 90 K with a decrease in temperature due to the lower ionization at cryogenic temperature and the nearly constant ΔEc.
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Received: 05 March 2018
Revised: 12 June 2018
Accepted manuscript online:
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PACS:
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72.10.-d
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(Theory of electronic transport; scattering mechanisms)
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73.40.Kp
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(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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81.05.Ea
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(III-V semiconductors)
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Fund: Project supported by the Advanced Research Foundation of China (Grant No. 914xxx803-051xxx111), the National Defense Advanced Research Project of China (Grant No. 315xxxxx301), and the National Defense Innovation Program of China (Grant No. 48xx4). |
Corresponding Authors:
Hongliang Lv
E-mail: hllv@mail.xidian.edu.cn
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Cite this article:
Jing Zhang(张静), Hongliang Lv(吕红亮), Haiqiao Ni(倪海桥), Zhichuan Niu(牛智川), Yuming Zhang(张玉明) Temperature dependence on the electrical and physical performance of InAs/AlSb heterojunction and high electron mobility transistors 2018 Chin. Phys. B 27 097201
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