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High quality PdTe2 thin films grown by molecular beam epitaxy |
| En Li(李恩)1, Rui-Zi Zhang(张瑞梓)1, Hang Li(李航)1, Chen Liu(刘晨)2, Geng Li(李更)1, Jia-Ou Wang(王嘉鸥)2, Tian Qian(钱天)1, Hong Ding(丁洪)1, Yu-Yang Zhang(张余洋)1, Shi-Xuan Du(杜世萱)1, Xiao Lin(林晓)1, Hong-Jun Gao(高鸿钧)1 |
1 Institute of Physics & University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China;
2 Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China |
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Abstract PdTe2, a member of layered transition metal dichalcogenides (TMDs), has aroused significant research interest due to the coexistence of superconductivity and type-Ⅱ Dirac fermions. It provides a promising platform to explore the interplay between superconducting quasiparticles and Dirac fermions. Moreover, PdTe2 has also been used as a substrate for monolayer antimonene growth. Here in this paper, we report the epitaxial growth of high quality PdTe2 films on bilayer graphene/SiC(0001) by molecular beam epitaxy (MBE). Atomically thin films are characterized by scanning tunneling microscopy (STM), X-ray photoemission spectroscopy (XPS), low-energy electron diffraction (LEED), and Raman spectroscopy. The band structure of 6-layer PdTe2 film is measured by angle-resolved photoemission spectroscopy (ARPES). Moreover, our air exposure experiments show excellent chemical stability of epitaxial PdTe2 film. High-quality PdTe2 films provide opportunities to build antimonene/PdTe2 heterostructure in ultrahigh vacuum for future applications in electronic and optoelectronic nanodevices.
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Received: 28 April 2018
Revised: 04 May 2018
Accepted manuscript online:
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PACS:
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68.37.Ef
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(Scanning tunneling microscopy (including chemistry induced with STM))
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68.55.-a
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(Thin film structure and morphology)
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81.15.Hi
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(Molecular, atomic, ion, and chemical beam epitaxy)
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61.05.jh
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(Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED))
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Corresponding Authors:
Xiao Lin, Hong-Jun Gao
E-mail: xlin@ucas.ac.cn;hjgao@iphy.ac.cn
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Cite this article:
En Li(李恩), Rui-Zi Zhang(张瑞梓), Hang Li(李航), Chen Liu(刘晨), Geng Li(李更), Jia-Ou Wang(王嘉鸥), Tian Qian(钱天), Hong Ding(丁洪), Yu-Yang Zhang(张余洋), Shi-Xuan Du(杜世萱), Xiao Lin(林晓), Hong-Jun Gao(高鸿钧) High quality PdTe2 thin films grown by molecular beam epitaxy 2018 Chin. Phys. B 27 086804
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