Chin. Phys. B
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Chin. Phys. B  2018, Vol. 27 Issue (2): 028101    DOI: 10.1088/1674-1056/27/2/028101
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Current Issue| Next Issue| Archive| Adv Search |
Suppression of electron and hole overflow in GaN-based near-ultraviolet laser diodes
Yao Xing(邢瑶)1,2, De-Gang Zhao(赵德刚)1,3, De-Sheng Jiang(江德生)1, Xiang Li(李翔)1, Zong-Shun Liu(刘宗顺)1, Jian-Jun Zhu(朱建军)1, Ping Chen(陈平)1, Jing Yang(杨静)1, Wei Liu(刘炜)1, Feng Liang(梁锋)1, Shuang-Tao Liu(刘双韬)1, Li-Qun Zhang(张立群)4, Wen-Jie Wang(王文杰)5, Mo Li(李沫)5, Yuan-Tao Zhang(张源涛)6, Guo-Tong Du(杜国同)6
1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China;
2. College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China;
3. School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
4. Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China;
5. Microsystem & Terahertz Research Center, Chinese Academy of Engineering Physics, Chengdu 610200, China;
6. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130023, China

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