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Chin. Phys. B, 2017, Vol. 26(7): 077304    DOI: 10.1088/1674-1056/26/7/077304
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

High holding voltage SCR for robust electrostatic discharge protection

Zhao Qi(齐钊), Ming Qiao(乔明), Yitao He(何逸涛), Bo Zhang(张波)
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
Abstract  

A novel silicon controlled rectifier (SCR) with high holding voltage (Vh) for electrostatic discharge (ESD) protection is proposed and investigated in this paper. The proposed SCR obtains high Vh by adding a long N+ layer (LN+) and a long P+ layer (LP+), which divide the conventional low voltage trigger silicon controlled rectifier (LVTSCR) into two SCRs (SCR1:P+/Nwell/Pwell/N+ and SCR2:P+/LN+/LP+/N+) with a shared emitter. Under the low ESD current (IESD), the two SCRs are turned on at the same time to induce the first snapback with high Vh (Vh1). As the IESD increases, the SCR2 will be turned off because of its low current gain. Therefore, the IESD will flow through the longer SCR1 path, bypassing SCR2, which induces the second snapback with high Vh (Vh2). The anti-latch-up ability of the proposed SCR for ESD protection is proved by a dynamic TLP-like (Transmission Line Pulse-like) simulation. An optimized Vh2 of 7.4 V with a maximum failure current (It2) of 14.7 mA/μ m is obtained by the simulation.

Keywords:  electrostatic discharge      holding voltage      latch-up-free      failure current  
Received:  15 February 2017      Revised:  27 March 2017      Accepted manuscript online: 
PACS:  73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))  
  85.30.De (Semiconductor-device characterization, design, and modeling)  
  85.30.Mn (Junction breakdown and tunneling devices (including resonance tunneling devices))  
  85.30.Rs (Thyristors)  
Fund: 

Project supported by the National Natural Science Foundation of China (Grant Nos.61376080 and 61674027) and the Natural Science Foundation of Guangdong Province,China (Grant Nos.2014A030313736 and 2016A030311022).

Corresponding Authors:  Ming Qiao     E-mail:  qiaoming@uestc.edu.cn

Cite this article: 

Zhao Qi(齐钊), Ming Qiao(乔明), Yitao He(何逸涛), Bo Zhang(张波) High holding voltage SCR for robust electrostatic discharge protection 2017 Chin. Phys. B 26 077304

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