Chin. Phys. B
Citation Search Quick Search

ISSN 1674-1056 (Print)
CN 11-5639/O4
About
   » About CPB
   » Editorial Board
   » SCI IF
   » Staff
   » Contact
Browse CPB
   » In Press
   » Current Issue
   » Earlier Issues
   » View by Fields
   » Top Downloaded
   » Sci Top Cited
Authors
   » Submit an Article
   » Manuscript Tracking
   » Call for Papers
   » Scope
   » Instruction for Authors
   » Copyright Agreement
   » Templates
   » Author FAQs
   » PACS
Referees
   » Review Policy
   » Referee Login
   » Referee FAQs
   » Editor in Chief Login
   » Editor Login
   » Office Login
Links
   »
Other articles related with "85.30.Mn":
108502 Hui-Fang Xu, Xin-Feng Han, Wen Sun
  Design and investigation of dopingless double-gate line tunneling transistor:Analog performance, linearity, and harmonic distortion analysis
    Chin. Phys. B   2020 Vol.29 (10): 108502-108502 [Abstract] (6) [HTML 1 KB] [PDF 648 KB] (3)
68503 Ling Zhu, Hai-Lian Liang, Xiao-Feng Gu, Jie Xu
  Design of a novel high holding voltage LVTSCR with embedded clamping diode
    Chin. Phys. B   2020 Vol.29 (6): 68503-068503 [Abstract] (46) [HTML 1 KB] [PDF 645 KB] (48)
58501 Zhijun Lyu, Hongliang Lu, Yuming Zhang, Yimen Zhang, Bin Lu, Yi Zhu, Fankang Meng, Jiale Sun
  Characteristic enhancement in tunnel field-effect transistors via introduction of vertical graded source
    Chin. Phys. B   2020 Vol.29 (5): 58501-058501 [Abstract] (62) [HTML 1 KB] [PDF 606 KB] (62)
18501 Yang Yu, Wenjie Hu, Qiang Li, Qian Shi, Yinyan Zhu, Hanxuan Lin, Tian Miao, Yu Bai, Yanmei Wang, Wenting Yang, Wenbin Wang, Hangwen Guo, Lifeng Yin, Jian Shen
  Visualization of tunnel magnetoresistance effect in single manganite nanowires
    Chin. Phys. B   2020 Vol.29 (1): 18501-018501 [Abstract] (178) [HTML 1 KB] [PDF 675 KB] (140)
108501 Hui-Fang Xu, Jian Cui, Wen Sun, Xin-Feng Han
  Analysis of non-uniform hetero-gate-dielectric dual-material control gate TFET for suppressing ambipolar nature and improving radio-frequency performance
    Chin. Phys. B   2019 Vol.28 (10): 108501-108501 [Abstract] (110) [HTML 1 KB] [PDF 564 KB] (108)
18505 Ru Han, Hai-Chao Zhang, Dang-Hui Wang, Cui Li
  Optimization of ambipolar current and analog/RF performance for T-shaped tunnel field-effect transistor with gate dielectric spacer
    Chin. Phys. B   2019 Vol.28 (1): 18505-018505 [Abstract] (210) [HTML 1 KB] [PDF 792 KB] (126)
78502 Cong Li, Zhi-Rui Yan, Yi-Qi Zhuang, Xiao-Long Zhao, Jia-Min Guo
  Ge/Si heterojunction L-shape tunnel field-effect transistors with hetero-gate-dielectric
    Chin. Phys. B   2018 Vol.27 (7): 78502-078502 [Abstract] (169) [HTML 0 KB] [PDF 1485 KB] (139)
77304 Zhao Qi, Ming Qiao, Yitao He, Bo Zhang
  High holding voltage SCR for robust electrostatic discharge protection
    Chin. Phys. B   2017 Vol.26 (7): 77304-077304 [Abstract] (214) [HTML 1 KB] [PDF 1057 KB] (341)
78502 Wen-Hao Zhang, Zun-Chao Li, Yun-He Guan, Ye-Fei Zhang
  Double-gate-all-around tunnel field-effect transistor
    Chin. Phys. B   2017 Vol.26 (7): 78502-078502 [Abstract] (200) [HTML 1 KB] [PDF 429 KB] (189)
18504 Shuqin Zhang(张书琴), Renrong Liang(梁仁荣), Jing Wang(王敬), Zhen Tan(谭桢), Jun Xu(许军)
  Heteromaterial-gate line tunnel field-effect transistor based on Si/Ge heterojunction
    Chin. Phys. B   2017 Vol.26 (1): 18504-018504 [Abstract] (183) [HTML 1 KB] [PDF 329 KB] (430)
128501 Li-Zhong Zhang, Yuan Wang, Yan-Dong He
  Structure-dependent behaviors of diode-triggered silicon controlled rectifier under electrostatic discharge stress
    Chin. Phys. B   2016 Vol.25 (12): 128501-128501 [Abstract] (178) [HTML 1 KB] [PDF 2266 KB] (214)
118501 Hai-Yan Kang, Hui-Yong Hu, Bin Wang
  Analytical threshold voltage model for strained silicon GAA-TFET
    Chin. Phys. B   2016 Vol.25 (11): 118501-118501 [Abstract] (190) [HTML 0 KB] [PDF 354 KB] (268)
108502 Yun-He Guan, Zun-Chao Li, Dong-Xu Luo, Qing-Zhi Meng, Ye-Fei Zhang
  Characteristics of cylindrical surrounding-gate GaAsxSb1-x/InyGa1-yAs heterojunction tunneling field-effect transistors
    Chin. Phys. B   2016 Vol.25 (10): 108502-108502 [Abstract] (178) [HTML 1 KB] [PDF 460 KB] (211)
48502 Da Ma, Xiao-Rong Luo, Jie Wei, Qiao Tan, Kun Zhou, Jun-Feng Wu
  Ultra-low specific on-resistance high-voltage vertical double diffusion metal-oxide-semiconductor field-effect transistor with continuous electron accumulation layer
    Chin. Phys. B   2016 Vol.25 (4): 48502-048502 [Abstract] (224) [HTML 1 KB] [PDF 788 KB] (339)
27701 Zhi Jiang, Yi-Qi Zhuang, Cong Li, Ping Wang, Yu-Qi Liu
  Influence of trap-assisted tunneling on trap-assisted tunneling current in double gate tunnel field-effect transistor
    Chin. Phys. B   2016 Vol.25 (2): 27701-027701 [Abstract] (273) [HTML 1 KB] [PDF 356 KB] (462)
108502 Zhang Shuai, Dong Shu-Rong, Wu Xiao-Jing, Zeng Jie, Zhong Lei, Wu Jian
  An improved GGNMOS triggered SCR for high holding voltage ESD protection applications
    Chin. Phys. B   2015 Vol.24 (10): 108502-108502 [Abstract] (229) [HTML 1 KB] [PDF 370 KB] (490)
108503 Zhang Li-Zhong, Wang Yuan, Lu Guang-Yi, Cao Jian, Zhang Xing
  A novel diode string triggered gated-PiN junction device for electrostatic discharge protection in 65-nm CMOS technology
    Chin. Phys. B   2015 Vol.24 (10): 108503-108503 [Abstract] (248) [HTML 1 KB] [PDF 1613 KB] (322)
47303 Ma Jin-Rong, Qiao Ming, Zhang Bo
  Novel substrate trigger SCR-LDMOS stacking structure for high-voltage ESD protection application
    Chin. Phys. B   2015 Vol.24 (4): 47303-047303 [Abstract] (322) [HTML 0 KB] [PDF 308 KB] (758)
57203 Wang Xiang-Dong, Deng Xiao-Chuan, Wang Yong-Wei, Wang Yong, Wen Yi, Zhang Bo
  Experimental and numerical analyses of high voltage 4H-SiC junction barrier Schottky rectifiers with linearly graded field limiting ring
    Chin. Phys. B   2014 Vol.23 (5): 57203-057203 [Abstract] (171) [HTML 1 KB] [PDF 498 KB] (523)
27101 Lü Yuan-Jie, Feng Zhi-Hong, Lin Zhao-Jun, Gu Guo-Dong, Dun Shao-Bo, Yin Jia-Yun, Han Ting-Ting, Cai Shu-Jun
  Comparison of electrical characteristic between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes
    Chin. Phys. B   2014 Vol.23 (2): 27101-027101 [Abstract] (192) [HTML 1 KB] [PDF 268 KB] (681)
38501 Li Yu-Chen, Zhang He-Ming, Zhang Yu-Ming, Hu Hui-Yong, Wang Bin, Lou Yong-Le, Zhou Chun-Yu
  Two-dimensional threshold voltage model of nanoscale silicon-on-insulator tunneling field-effect transistor
    Chin. Phys. B   2013 Vol.22 (3): 38501-038501 [Abstract] (404) [HTML 0 KB] [PDF 417 KB] (1466)
108502 Qiao Ming, Zhuang Xiang, Wu Li-Juan, Zhang Wen-Tong, Wen Heng-Juan, Zhang Bo, Li Zhao-Ji
  Breakdown voltage model and structure realization of a thin silicon layer with linear variable doping on a silicon on insulator high voltage device with multiple step field plates
    Chin. Phys. B   2012 Vol.21 (10): 108502-108502 [Abstract] (671) [HTML 1 KB] [PDF 2606 KB] (1536)
118401 Huang Jian-Hua, Lü Hong-Liang, Zhang Yu-Ming, Zhang Yi-Men, Tang Xiao-Yan, Chen Feng-Ping, Song Qing-Wen
  Simulation study of a mixed terminal structure for 4H-SiC merged PiN/Schottky diode
    Chin. Phys. B   2011 Vol.20 (11): 118401-118401 [Abstract] (966) [HTML 0 KB] [PDF 304 KB] (1012)
47310 Li Qiu-Zhu, Wang Kai-Qun, Jian Ao-Qun, Liu Xin, Zhang Bin-Zhen
  Pressure effect study on the IV property of the GaAs-based resonant tunnelling structure by photoluminescence measurement
    Chin. Phys. B   2010 Vol.19 (4): 47310-047310 [Abstract] (1026) [HTML 0 KB] [PDF 363 KB] (550)
1242 Xiong Ji-Jun, Mao Hai-Yang, Zhang Wen-Dong, Wang Kai-Qun
  A novel micro accelerometer with adjustable sensitivity based on resonant tunneling diodes
    Chin. Phys. B   2009 Vol.18 (3): 1242-1247 [Abstract] (678) [HTML 0 KB] [PDF 1230 KB] (809)
4645 Zhang Yang, Zhang Yu, Zeng Yi-Ping
  Dependence of current-voltage characteristics of pseudomorphic AlAs/In0.53a0.47s/InAs resonant tunneling diodes on quantum well widths
    Chin. Phys. B   2008 Vol.17 (12): 4645-4647 [Abstract] (984) [HTML 0 KB] [PDF 1208 KB] (639)
1472 Zhang Yang, Han Chun-Lin, Gao Jian-Feng, Zhu Zhan-Ping, Wang Bao-Qiang, Zeng Yi-Ping
  Influence of spacer layer thickness on the current-voltage characteristics of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes
    Chin. Phys. B   2008 Vol.17 (4): 1472-1474 [Abstract] (991) [HTML 0 KB] [PDF 157 KB] (501)
1150 Wang Jian, Zhang Wen-Dong, Xue Chen-Yang, Xiong Ji-Jun, Liu Jun, Xie Bin
  Pressure effects in AlAs/InxGa1-xAs/GaAs resonant tunnelling diodes for application in micromachined sensors
    Chin. Phys. B   2007 Vol.16 (4): 1150-1154 [Abstract] (847) [HTML 0 KB] [PDF 496 KB] (682)
2422 Ma Long, Huang Ying-Long, Zhang Yang, Yang Fu-Hua, Wang Liang-Chen
  A bistable, self-latching inverter by the monolithic integration of resonant tunnelling diode and high electron mobility transistor
    Chin. Phys. B   2006 Vol.15 (10): 2422-2426 [Abstract] (1151) [HTML 0 KB] [PDF 408 KB] (503)
2130 Song Hong-Zhou, Zhang Ping, Duan Su-Qing, Zhao Xian-Geng
  Quantum control of two interacting electrons in a coupled quantum dot
    Chin. Phys. B   2006 Vol.15 (9): 2130-2141 [Abstract] (746) [HTML 0 KB] [PDF 249 KB] (584)
First page | Prev page | Next page | Last pagePage 1 of 2, 31 records
Copyright © the Chinese Physical Society
Address: Institute of Physics, Chinese Academy of Sciences, P. O. Box 603,Beijing 100190 China(100190)
Tel: 010-82649026   Fax: 010-82649027   E-Mail: cpb@aphy.iphy.ac.cn
Supported by Beijing Magtech Co. Ltd. Tel: 86-010-62662699 E-mail: support@magtech.com.cn