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CN 11-5639/O4
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Other articles related with "85.30.Rs":
127201 Qing Liu, Hong-Bin Pu, Xi Wang
  Ultra-high voltage 4H-SiC gate turn-off thyristor forlow switching time
    Chin. Phys. B   2019 Vol.28 (12): 127201-127201 [Abstract] (113) [HTML 1 KB] [PDF 1162 KB] (93)
108502 Xi Wang, Hong-Bin Pu, Qing Liu, Li-Qi An
  Shortening turn-on delay of SiC light triggered thyristor by 7-shaped thin n-base doping profile
    Chin. Phys. B   2018 Vol.27 (10): 108502-108502 [Abstract] (240) [HTML 1 KB] [PDF 741 KB] (111)
108505 Xi Wang, Hongbin Pu, Qing Liu, Chunlan Chen, Zhiming Chen
  Injection modulation of p+–n emitter junction in 4H–SiC light triggered thyristor by double-deck thin n-base
    Chin. Phys. B   2017 Vol.26 (10): 108505-108505 [Abstract] (164) [HTML 0 KB] [PDF 374 KB] (251)
77304 Zhao Qi, Ming Qiao, Yitao He, Bo Zhang
  High holding voltage SCR for robust electrostatic discharge protection
    Chin. Phys. B   2017 Vol.26 (7): 77304-077304 [Abstract] (207) [HTML 1 KB] [PDF 1057 KB] (330)
108502 Zhang Shuai, Dong Shu-Rong, Wu Xiao-Jing, Zeng Jie, Zhong Lei, Wu Jian
  An improved GGNMOS triggered SCR for high holding voltage ESD protection applications
    Chin. Phys. B   2015 Vol.24 (10): 108502-108502 [Abstract] (225) [HTML 1 KB] [PDF 370 KB] (482)
47303 Ma Jin-Rong, Qiao Ming, Zhang Bo
  Novel substrate trigger SCR-LDMOS stacking structure for high-voltage ESD protection application
    Chin. Phys. B   2015 Vol.24 (4): 47303-047303 [Abstract] (321) [HTML 0 KB] [PDF 308 KB] (753)
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