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CN 11-5639/O4
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Other articles related with "85.30.De":
38503 Jia-Fei Yao, Yu-Feng Guo, Zhen-Yu Zhang, Ke-Meng Yang, Mao-Lin Zhang, Tian Xia
  Numerical and analytical investigations for the SOI LDMOS with alternated high-k dielectric and step doped silicon pillars
    Chin. Phys. B   2020 Vol.29 (3): 38503-038503 [Abstract] (7) [HTML 1 KB] [PDF 550 KB] (4)
38504 Xuan-Zhang Li, Ling Sun, Jin-Lei Lu, Jie Liu, Chen Yue, Li-Li Xie, Wen-Xin Wang, Hong Chen, Hai-Qiang Jia, Lu Wang
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    Chin. Phys. B   2020 Vol.29 (3): 38504-038504 [Abstract] (5) [HTML 1 KB] [PDF 381 KB] (2)
18502 Yanbing Han, Sage Bauers, Qun Zhang, Andriy Zakutayev
  High-throughput fabrication and semi-automated characterization of oxide thin film transistors
    Chin. Phys. B   2020 Vol.29 (1): 18502-018502 [Abstract] (34) [HTML 1 KB] [PDF 4344 KB] (28)
127201 Qing Liu, Hong-Bin Pu, Xi Wang
  Ultra-high voltage 4H-SiC gate turn-off thyristor forlow switching time
    Chin. Phys. B   2019 Vol.28 (12): 127201-127201 [Abstract] (40) [HTML 1 KB] [PDF 1162 KB] (27)
128503 Haibin Huang, Lang Zhou, Jiren Yuan, Zhijue Quan
  Simulation of a-Si: H/c-Si heterojunction solar cells: From planar junction to local junction
    Chin. Phys. B   2019 Vol.28 (12): 128503-128503 [Abstract] (57) [HTML 1 KB] [PDF 1339 KB] (65)
118103 Qianqian Wu, Fan Cao, Lingmei Kong, Xuyong Yang
  InP quantum dots-based electroluminescent devices
    Chin. Phys. B   2019 Vol.28 (11): 118103-118103 [Abstract] (110) [HTML 1 KB] [PDF 0 KB] (121)
104212 Xiao-Ming Jin, Wei Chen, Jun-Lin Li, Chao Qi, Xiao-Qiang Guo, Rui-Bin Li, Yan Liu
  Single event upset on static random access memory devices due to spallation, reactor, and monoenergetic neutrons
    Chin. Phys. B   2019 Vol.28 (10): 104212-104212 [Abstract] (60) [HTML 1 KB] [PDF 5125 KB] (47)
107301 Mei Ge, Qing Cai, Bao-Hua Zhang, Dun-Jun Chen, Li-Qun Hu, Jun-Jun Xue, Hai Lu, Rong Zhang, You-Dou Zheng
  Negative transconductance effect in p-GaN gate AlGaN/GaN HEMTs by traps in unintentionally doped GaN buffer layer
    Chin. Phys. B   2019 Vol.28 (10): 107301-107301 [Abstract] (54) [HTML 1 KB] [PDF 1005 KB] (64)
98502 Rui Chen, Dong-Yue Jin, Wan-Rong Zhang, Li-Fan Wang, Bin Guo, Hu Chen, Ling-Han Yin, Xiao-Xue Jia
  Thermal resistance matrix representation of thermal effects and thermal design of microwave power HBTs with two-dimensional array layout
    Chin. Phys. B   2019 Vol.28 (9): 98502-098502 [Abstract] (58) [HTML 1 KB] [PDF 2321 KB] (55)
98503 Xiaolong Cai, Dong Zhou, Liang Cheng, Fangfang Ren, Hong Zhong, Rong Zhang, Youdou Zheng, Hai Lu
  Performance improvement of 4H-SiC PIN ultraviolet avalanche photodiodes with different intrinsic layer thicknesses
    Chin. Phys. B   2019 Vol.28 (9): 98503-098503 [Abstract] (53) [HTML 1 KB] [PDF 1018 KB] (59)
88501 Fei Hou, Ruibo Chen, Feibo Du, Jizhi Liu, Zhiwei Liu, Juin J Liou
  Improving robustness of GGNMOS with P-base layer for electrostatic discharge protection in 0.5-μm BCD process
    Chin. Phys. B   2019 Vol.28 (8): 88501-088501 [Abstract] (66) [HTML 1 KB] [PDF 1117 KB] (48)
88801 Slimane Latreche, Mohamed Fathi, Abderrahmane Kadri
  New design of ferroelectric solar cell combined with luminescent solar concentrator
    Chin. Phys. B   2019 Vol.28 (8): 88801-088801 [Abstract] (139) [HTML 1 KB] [PDF 2649 KB] (130)
78501 Shu-Xiang Sun, Ming-Ming Chang, Meng-Ke Li, Liu-Hong Ma, Ying-Hui Zhong, Yu-Xiao Li, Peng Ding, Zhi Jin, Zhi-Chao Wei
  Effect of defects properties on InP-based high electron mobility transistors
    Chin. Phys. B   2019 Vol.28 (7): 78501-078501 [Abstract] (80) [HTML 1 KB] [PDF 1176 KB] (74)
67302 Yan Liu, Wei Chen, Chaohui He, Chunlei Su, Chenhui Wang, Xiaoming Jin, Junlin Li, Yuanyuan Xue
  Analysis of displacement damage effects on bipolar transistors irradiated by spallation neutrons
    Chin. Phys. B   2019 Vol.28 (6): 67302-067302 [Abstract] (84) [HTML 1 KB] [PDF 1403 KB] (56)
68502 Taha Haddadifam, Mohammad Azim Karami
  Dark count rate and band to band tunneling optimization for single photon avalanche diode topologies
    Chin. Phys. B   2019 Vol.28 (6): 68502-068502 [Abstract] (151) [HTML 1 KB] [PDF 6731 KB] (69)
68504 Zheng-Xin Wen, Feng Zhang, Zhan-Wei Shen, Jun Chen, Ya-Wei He, Guo-Guo Yan, Xing-Fang Liu, Wan-Shun Zhao, Lei Wang, Guo-Sheng Sun, Yi-Ping Zeng
  Design and fabrication of 10-kV silicon-carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension
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58503 Zhi-Gang Wang, Tao Liao, Ya-Nan Wang
  Modeling electric field of power metal-oxide-semiconductor field-effect transistor with dielectric trench based on Schwarz-Christoffel transformation
    Chin. Phys. B   2019 Vol.28 (5): 58503-058503 [Abstract] (101) [HTML 1 KB] [PDF 1019 KB] (63)
47302 Tie-Cheng Han, Hong-Dong Zhao, Xiao-Can Peng
  Short-gate AlGaN/GaN high-electron mobility transistors with BGaN buffer
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37804 Ming Liu, Cong Wang, Li-Qing Zhou
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    Chin. Phys. B   2019 Vol.28 (3): 37804-037804 [Abstract] (267) [HTML 1 KB] [PDF 5437 KB] (399)
27302 Hao Wu, Bao-Xing Duan, Luo-Yun Yang, Yin-Tang Yang
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    Chin. Phys. B   2019 Vol.28 (2): 27302-027302 [Abstract] (206) [HTML 1 KB] [PDF 504 KB] (106)
18505 Ru Han, Hai-Chao Zhang, Dang-Hui Wang, Cui Li
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127302 Hui Wang, Ling-Li Jiang, Xin-Peng Lin, Si-Qi Lei, Hong-Yu Yu
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128501 Xin Xie, Da-Wei Bi, Zhi-Yuan Hu, Hui-Long Zhu, Meng-Ying Zhang, Zheng-Xuan Zhang, Shi-Chang Zou
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118501 Jing Liu, Xiaoxin Xu, Chuanbing Chen, Tiancheng Gong, Zhaoan Yu, Qing Luo, Peng Yuan, Danian Dong, Qi Liu, Shibing Long, Hangbing Lv, Ming Liu
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108502 Xi Wang, Hong-Bin Pu, Qing Liu, Li-Qi An
  Shortening turn-on delay of SiC light triggered thyristor by 7-shaped thin n-base doping profile
    Chin. Phys. B   2018 Vol.27 (10): 108502-108502 [Abstract] (198) [HTML 1 KB] [PDF 741 KB] (71)
87102 Xue-Qian Zhong, Jue Wang, Bao-Zhu Wang, Heng-Yu Wang, Qing Guo, Kuang Sheng
  Investigations on mesa width design for 4H-SiC trench super junction Schottky diodes
    Chin. Phys. B   2018 Vol.27 (8): 87102-087102 [Abstract] (192) [HTML 0 KB] [PDF 1573 KB] (109)
88501 Weizhong Chen, Yao Huang, Lijun He, Zhengsheng Han, Yi Huang
  A snapback-free TOL-RC-LIGBT with vertical P-collector and N-buffer design
    Chin. Phys. B   2018 Vol.27 (8): 88501-088501 [Abstract] (145) [HTML 1 KB] [PDF 800 KB] (94)
78501 Yin-Yong Luo, Feng-Qi Zhang, Xiao-Yu Pan, Hong-Xia Guo, Yuan-Ming Wang
  Dependence of single event upsets sensitivity of low energy proton on test factors in 65 nm SRAM
    Chin. Phys. B   2018 Vol.27 (7): 78501-078501 [Abstract] (95) [HTML 1 KB] [PDF 647 KB] (96)
78502 Cong Li, Zhi-Rui Yan, Yi-Qi Zhuang, Xiao-Long Zhao, Jia-Min Guo
  Ge/Si heterojunction L-shape tunnel field-effect transistors with hetero-gate-dielectric
    Chin. Phys. B   2018 Vol.27 (7): 78502-078502 [Abstract] (140) [HTML 0 KB] [PDF 1485 KB] (86)
67402 Bin Wang, He-Ming Zhang, Hui-Yong Hu, Xiao-Wei Shi
  Enhancement of off-state characteristics in junctionless field effect transistor using a field plate
    Chin. Phys. B   2018 Vol.27 (6): 67402-067402 [Abstract] (147) [HTML 0 KB] [PDF 628 KB] (120)
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