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CN 11-5639/O4
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Other articles related with "85.30.De":
118103 Qianqian Wu, Fan Cao, Lingmei Kong, Xuyong Yang
  InP quantum dots-based electroluminescent devices
    Chin. Phys. B   2019 Vol.28 (11): 118103-118103 [Abstract] (82) [HTML 1 KB] [PDF 4160 KB] (85)
104212 Xiao-Ming Jin, Wei Chen, Jun-Lin Li, Chao Qi, Xiao-Qiang Guo, Rui-Bin Li, Yan Liu
  Single event upset on static random access memory devices due to spallation, reactor, and monoenergetic neutrons
    Chin. Phys. B   2019 Vol.28 (10): 104212-104212 [Abstract] (44) [HTML 1 KB] [PDF 5125 KB] (22)
107301 Mei Ge, Qing Cai, Bao-Hua Zhang, Dun-Jun Chen, Li-Qun Hu, Jun-Jun Xue, Hai Lu, Rong Zhang, You-Dou Zheng
  Negative transconductance effect in p-GaN gate AlGaN/GaN HEMTs by traps in unintentionally doped GaN buffer layer
    Chin. Phys. B   2019 Vol.28 (10): 107301-107301 [Abstract] (35) [HTML 1 KB] [PDF 1005 KB] (32)
98502 Rui Chen, Dong-Yue Jin, Wan-Rong Zhang, Li-Fan Wang, Bin Guo, Hu Chen, Ling-Han Yin, Xiao-Xue Jia
  Thermal resistance matrix representation of thermal effects and thermal design of microwave power HBTs with two-dimensional array layout
    Chin. Phys. B   2019 Vol.28 (9): 98502-098502 [Abstract] (41) [HTML 1 KB] [PDF 2321 KB] (37)
98503 Xiaolong Cai, Dong Zhou, Liang Cheng, Fangfang Ren, Hong Zhong, Rong Zhang, Youdou Zheng, Hai Lu
  Performance improvement of 4H-SiC PIN ultraviolet avalanche photodiodes with different intrinsic layer thicknesses
    Chin. Phys. B   2019 Vol.28 (9): 98503-098503 [Abstract] (42) [HTML 1 KB] [PDF 1018 KB] (48)
88501 Fei Hou, Ruibo Chen, Feibo Du, Jizhi Liu, Zhiwei Liu, Juin J Liou
  Improving robustness of GGNMOS with P-base layer for electrostatic discharge protection in 0.5-μm BCD process
    Chin. Phys. B   2019 Vol.28 (8): 88501-088501 [Abstract] (53) [HTML 1 KB] [PDF 1117 KB] (35)
88801 Slimane Latreche, Mohamed Fathi, Abderrahmane Kadri
  New design of ferroelectric solar cell combined with luminescent solar concentrator
    Chin. Phys. B   2019 Vol.28 (8): 88801-088801 [Abstract] (127) [HTML 1 KB] [PDF 2649 KB] (105)
78501 Shu-Xiang Sun, Ming-Ming Chang, Meng-Ke Li, Liu-Hong Ma, Ying-Hui Zhong, Yu-Xiao Li, Peng Ding, Zhi Jin, Zhi-Chao Wei
  Effect of defects properties on InP-based high electron mobility transistors
    Chin. Phys. B   2019 Vol.28 (7): 78501-078501 [Abstract] (60) [HTML 1 KB] [PDF 1176 KB] (63)
67302 Yan Liu, Wei Chen, Chaohui He, Chunlei Su, Chenhui Wang, Xiaoming Jin, Junlin Li, Yuanyuan Xue
  Analysis of displacement damage effects on bipolar transistors irradiated by spallation neutrons
    Chin. Phys. B   2019 Vol.28 (6): 67302-067302 [Abstract] (65) [HTML 1 KB] [PDF 1403 KB] (48)
68502 Taha Haddadifam, Mohammad Azim Karami
  Dark count rate and band to band tunneling optimization for single photon avalanche diode topologies
    Chin. Phys. B   2019 Vol.28 (6): 68502-068502 [Abstract] (142) [HTML 1 KB] [PDF 6731 KB] (53)
68504 Zheng-Xin Wen, Feng Zhang, Zhan-Wei Shen, Jun Chen, Ya-Wei He, Guo-Guo Yan, Xing-Fang Liu, Wan-Shun Zhao, Lei Wang, Guo-Sheng Sun, Yi-Ping Zeng
  Design and fabrication of 10-kV silicon-carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension
    Chin. Phys. B   2019 Vol.28 (6): 68504-068504 [Abstract] (68) [HTML 1 KB] [PDF 1521 KB] (59)
58503 Zhi-Gang Wang, Tao Liao, Ya-Nan Wang
  Modeling electric field of power metal-oxide-semiconductor field-effect transistor with dielectric trench based on Schwarz-Christoffel transformation
    Chin. Phys. B   2019 Vol.28 (5): 58503-058503 [Abstract] (81) [HTML 1 KB] [PDF 1019 KB] (44)
47302 Tie-Cheng Han, Hong-Dong Zhao, Xiao-Can Peng
  Short-gate AlGaN/GaN high-electron mobility transistors with BGaN buffer
    Chin. Phys. B   2019 Vol.28 (4): 47302-047302 [Abstract] (101) [HTML 1 KB] [PDF 496 KB] (78)
37804 Ming Liu, Cong Wang, Li-Qing Zhou
  Development of small pixel HgCdTe infrared detectors
    Chin. Phys. B   2019 Vol.28 (3): 37804-037804 [Abstract] (239) [HTML 1 KB] [PDF 5437 KB] (305)
27302 Hao Wu, Bao-Xing Duan, Luo-Yun Yang, Yin-Tang Yang
  Theoretical analytic model for RESURF AlGaN/GaN HEMTs
    Chin. Phys. B   2019 Vol.28 (2): 27302-027302 [Abstract] (171) [HTML 1 KB] [PDF 504 KB] (83)
18505 Ru Han, Hai-Chao Zhang, Dang-Hui Wang, Cui Li
  Optimization of ambipolar current and analog/RF performance for T-shaped tunnel field-effect transistor with gate dielectric spacer
    Chin. Phys. B   2019 Vol.28 (1): 18505-018505 [Abstract] (158) [HTML 1 KB] [PDF 792 KB] (65)
127302 Hui Wang, Ling-Li Jiang, Xin-Peng Lin, Si-Qi Lei, Hong-Yu Yu
  A simulation study of field plate termination in Ga2O3 Schottky barrier diodes
    Chin. Phys. B   2018 Vol.27 (12): 127302-127302 [Abstract] (171) [HTML 1 KB] [PDF 650 KB] (68)
128501 Xin Xie, Da-Wei Bi, Zhi-Yuan Hu, Hui-Long Zhu, Meng-Ying Zhang, Zheng-Xuan Zhang, Shi-Chang Zou
  Influence of characteristics' measurement sequence on total ionizing dose effect in PDSOI nMOSFET
    Chin. Phys. B   2018 Vol.27 (12): 128501-128501 [Abstract] (128) [HTML 1 KB] [PDF 1013 KB] (60)
118501 Jing Liu, Xiaoxin Xu, Chuanbing Chen, Tiancheng Gong, Zhaoan Yu, Qing Luo, Peng Yuan, Danian Dong, Qi Liu, Shibing Long, Hangbing Lv, Ming Liu
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108502 Xi Wang, Hong-Bin Pu, Qing Liu, Li-Qi An
  Shortening turn-on delay of SiC light triggered thyristor by 7-shaped thin n-base doping profile
    Chin. Phys. B   2018 Vol.27 (10): 108502-108502 [Abstract] (183) [HTML 1 KB] [PDF 741 KB] (65)
87102 Xue-Qian Zhong, Jue Wang, Bao-Zhu Wang, Heng-Yu Wang, Qing Guo, Kuang Sheng
  Investigations on mesa width design for 4H-SiC trench super junction Schottky diodes
    Chin. Phys. B   2018 Vol.27 (8): 87102-087102 [Abstract] (171) [HTML 0 KB] [PDF 1573 KB] (92)
88501 Weizhong Chen, Yao Huang, Lijun He, Zhengsheng Han, Yi Huang
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    Chin. Phys. B   2018 Vol.27 (8): 88501-088501 [Abstract] (125) [HTML 1 KB] [PDF 800 KB] (83)
78501 Yin-Yong Luo, Feng-Qi Zhang, Xiao-Yu Pan, Hong-Xia Guo, Yuan-Ming Wang
  Dependence of single event upsets sensitivity of low energy proton on test factors in 65 nm SRAM
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78502 Cong Li, Zhi-Rui Yan, Yi-Qi Zhuang, Xiao-Long Zhao, Jia-Min Guo
  Ge/Si heterojunction L-shape tunnel field-effect transistors with hetero-gate-dielectric
    Chin. Phys. B   2018 Vol.27 (7): 78502-078502 [Abstract] (129) [HTML 0 KB] [PDF 1485 KB] (75)
67402 Bin Wang, He-Ming Zhang, Hui-Yong Hu, Xiao-Wei Shi
  Enhancement of off-state characteristics in junctionless field effect transistor using a field plate
    Chin. Phys. B   2018 Vol.27 (6): 67402-067402 [Abstract] (125) [HTML 0 KB] [PDF 628 KB] (108)
47305 Wei Mao, Hai-Yong Wang, Peng-Hao Shi, Xiao-Fei Wang, Ming Du, Xue-Feng Zheng, Chong Wang, Xiao-Hua Ma, Jin-Cheng Zhang, Yue Hao
  Low specific on-resistance GaN-based vertical heterostructure field effect transistors with nonuniform doping superjunctions
    Chin. Phys. B   2018 Vol.27 (4): 47305-047305 [Abstract] (163) [HTML 1 KB] [PDF 1596 KB] (161)
48502 Xue Chen, Zhi-Gang Wang, Xi Wang, James B Kuo
  Closed-form breakdown voltage/specific on-resistance model using charge superposition technique for vertical power double-diffused metal-oxide-semiconductor device with high-κ insulator
    Chin. Phys. B   2018 Vol.27 (4): 48502-048502 [Abstract] (202) [HTML 1 KB] [PDF 1087 KB] (118)
38501 Xiaoyu Pan, Hongxia Guo, Yinhong Luo, Fengqi Zhang, Lili Ding
  Analysis of multiple cell upset sensitivity in bulk CMOS SRAM after neutron irradiation
    Chin. Phys. B   2018 Vol.27 (3): 38501-038501 [Abstract] (106) [HTML 0 KB] [PDF 2130 KB] (207)
38502 Haibin Huang, Gangyu Tian, Lang Zhou, Jiren Yuan, Wolfgang R. Fahrner, Wenbin Zhang, Xingbing Li, Wenhao Chen, Renzhong Liu
  Simulation and experimental study of a novel bifacial structure of silicon heterojunction solar cell for high efficiency and low cost
    Chin. Phys. B   2018 Vol.27 (3): 38502-038502 [Abstract] (113) [HTML 1 KB] [PDF 2742 KB] (172)
28501 Meng-Ying Zhang, Zhi-Yuan Hu, Da-Wei Bi, Li-Hua Dai, Zheng-Xuan Zhang
  Enhanced radiation-induced narrow channel effects in 0.13-μm PDSOI nMOSFETs with shallow trench isolation
    Chin. Phys. B   2018 Vol.27 (2): 28501-028501 [Abstract] (109) [HTML 0 KB] [PDF 469 KB] (187)
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