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Chin. Phys. B, 2023, Vol. 32(2): 028502    DOI: 10.1088/1674-1056/ac7b1d

Enhancement of holding voltage by a modified low-voltage trigger silicon-controlled rectifier structure for electrostatic discharge protection

Yuankang Chen(陈远康), Yuanliang Zhou(周远良), Jie Jiang(蒋杰), Tingke Rao(饶庭柯), Wugang Liao(廖武刚), and Junjie Liu(刘俊杰)
College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, China
Abstract  A novel structure of low-voltage trigger silicon-controlled rectifiers (LVTSCRs) with low trigger voltage and high holding voltage is proposed for electrostatic discharge (ESD) protection. The proposed ESD protection device possesses an ESD implant and a floating structure. This improvement enhances the current discharge capability of the gate-grounded NMOS and weakens the current gain of the silicon-controlled rectifier current path. According to the simulation results, the proposed device retains a low trigger voltage characteristic of LVTSCRs and simultaneously increases the holding voltage to 5.53 V, providing an effective way to meet the ESD protection requirement of the 5 V CMOS process.
Keywords:  electrostatic discharge      floating n-well      low-voltage trigger silicon-controlled rectifier  
Received:  26 March 2022      Revised:  17 June 2022      Accepted manuscript online:  22 June 2022
PACS:  85.30.De (Semiconductor-device characterization, design, and modeling)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61904110)
Corresponding Authors:  Wugang Liao     E-mail:

Cite this article: 

Yuankang Chen(陈远康), Yuanliang Zhou(周远良), Jie Jiang(蒋杰), Tingke Rao(饶庭柯), Wugang Liao(廖武刚), and Junjie Liu(刘俊杰) Enhancement of holding voltage by a modified low-voltage trigger silicon-controlled rectifier structure for electrostatic discharge protection 2023 Chin. Phys. B 32 028502

[1] Kranthi N K and Sarro J D 2021 IEEE Trans. Electron Dev. 68 4242
[2] Du F and Liou J J 2019 IEEE Trans. Electron Dev. 66 2062
[3] Ma Q G, Wang H H and Zhang S D 2019 Acta Phys Sin. 68 158501 (in Chinese)
[4] Lin C Y, Wu Y H and Ker MD 2016 IEEE Electron Dev. Lett. 37 1387
[5] Cui Q, Salcedo J A, Parthasarathy S, Zhou Y, Liou J J and Hajjar J J 2013 IEEE Electron Dev. Lett. 34 178
[6] Lee J H, Prabhu M and Natarajan M I 2018 IEEE Electron Dev. Lett. 39 1011
[7] Guan J, Wang Y, Hao S, Zheng Y and Jin X 2017 IEEE Electron Dev. Lett. 38 1716
[8] Du F and Liou J J 2020 IEEE Trans. Electron Dev. 67 576
[9] Liang H, Xu Q, Zhu L, Gu X, Sun G and Lin F 2019 IEEE Electron Dev. Lett. 40 163
[10] Song B B, Do K I and Koo Y S 2018 IEEE J. Electron Dev. Soc. 6 691
[11] Huang X, Liou J J, Liu Z, Liu F, Liu J and Cheng H 2016 IEEE Electron Dev. Lett. 37 1311
[12] Ker M D and Chen S H 2007 IEEE J. Solid-State Circuits. 42 1158
[13] Parthasarathy S, Salcedo J A and Hajjar J 2013 Proceedings of the IEEE International Reliability Physics Symposium, April 14-18, 2013, Anaheim, USA, p. EL.5.1
[14] Wang Y, Chen X, Jia D, Lu J, Wei W and Dong P 2020 IEEE Trans. Dev. Mater. Relib. 20 658
[15] Chen R, Liu H, Song W, Du F and Zhang H 2020 Nanoscale Res. Lett. 15 212
[16] Han Y, Song B, Dong S R, Li M L and Ma F 2010 Microelectron. Rel. 51 332
[17] Song W, Du F B and Liu Z W 2020 Semicond. Sci. Technol. 35 055015
[18] Salcedo J A, Liou J J, Liu Z and Vinson J E 2007 IEEE Trans. Electron Dev. 54 822
[19] Ma Q G, Zhou L F, Yu Y, Ma G Y and Zhang S D 2019 Acta Phys Sin. 68 108501 (in Chinese)
[20] Li J Y, Wang Y and Jia D D 2020 Chin. Phys. B 29 108501
[21] Jin X, Zheng Y, Wang Y, Guan J and Hao S 2017 Solid-State Electron. 139 69
[22] Dong S R, Wu J, Miao M and Liou J J 2012 IEEE Electron Dev. Lett. 33 1345
[23] Chen H W, Chen S L, Huang Y T and Chen H H 2020 IEEE J. Electron Dev. Soc. 8 864
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