An improved GGNMOS triggered SCR for high holding voltage ESD protection applications

doi:10.1088/1674-1056/24/10/108502

Abstract Developing an electrostatic discharge (ESD) protection device with a better latch-up immunity has been a challenging issue for the nanometer complementary metal-oxide semiconductor (CMOS) technology. In this work, an improved grounded-gate N-channel metal-oxide semiconductor (GGNMOS) transistor triggered silicon-controlled rectifier (SCR) structure, named GGSCR, is proposed for high holding voltage ESD protection applications. The GGSCR demonstrates a double snapback behavior as a result of progressive trigger-on of the GGNMOS and SCR. The double snapback makes the holding voltage increase from 3.43 V to 6.25 V as compared with the conventional low-voltage SCR. The TCAD simulations are carried out to verify the modes of operation of the device.

Keywords: electrostatic discharge holding voltage GGSCR

Received: 27 November 2014
Revised: 30 April 2015
Accepted manuscript online:

PACS:	85.30.De	(Semiconductor-device characterization, design, and modeling)
	85.30.Mn	(Junction breakdown and tunneling devices (including resonance tunneling devices))
	85.30.Rs	(Thyristors)
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

Corresponding Authors: Zhang Shuai
E-mail: szhang_fudan@hotmail.com

Cite this article:

Zhang Shuai (张帅), Dong Shu-Rong (董树荣), Wu Xiao-Jing (吴晓京), Zeng Jie (曾杰), Zhong Lei (钟雷), Wu Jian (吴健) An improved GGNMOS triggered SCR for high holding voltage ESD protection applications 2015 Chin. Phys. B 24 108502

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An improved GGNMOS triggered SCR for high holding voltage ESD protection applications

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