Abundant photoelectronic behaviors of La0.67Sr0.33MnO3/Nb: SrTiO3 junctions

doi:10.1088/1674-1056/26/7/077302

Abstract

Temperature dependence on rectifying and photoelectronic properties of La_0.67Sr_0.33MnO₃/Nb:SrTiO₃ (LSMO/STON) junctions with the thickness values of LSMO film varying from 1 nm to 54 nm are systematically studied. As shown experimentally, the junctions exhibit good rectifying properties. The significant differences in photoemission property among the LSMO/STON junctions are observed. For the junction in a thicker LSMO film, the photocurrent shows a monotonic growth when temperature decreases from 300 K to 13 K. While for the junction in an ultrathin LSMO film, the behaviors of photocurrent are more complicated. The photocurrent increases rapidly to a maximum and then smoothly decreases with the decrease of temperature. The unusual phenomenon can be elucidated by the diffusion and recombination model of the photocarrier.

Keywords: manganite heterojunction photocurrent

Received: 22 March 2017
Revised: 08 April 2017
Accepted manuscript online:

PACS:	73.40.Lq	(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	75.47.Lx	(Magnetic oxides)
	73.50.Pz	(Photoconduction and photovoltaic effects)

Fund:

Project supported by the National Natural Science Foundation of China (Grant Nos.11520101002 and 11474024).

Corresponding Authors: Deng-Jing Wang
E-mail: wangdengjing@wust.edu.cn

Cite this article:

Hai-Lin Huang(黄海林), Deng-Jing Wang(王登京), Hong-Rui Zhang(张洪瑞), Hui Zhang(张慧), Chang-Min Xiong(熊昌民), Ji-Rong Sun(孙继荣), Bao-Gen Shen(沈保根) Abundant photoelectronic behaviors of La_0.67Sr_0.33MnO₃/Nb: SrTiO₃ junctions 2017 Chin. Phys. B 26 077302

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Abundant photoelectronic behaviors of La0.67Sr0.33MnO3/Nb: SrTiO3 junctions

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Abundant photoelectronic behaviors of La_0.67Sr_0.33MnO₃/Nb: SrTiO₃ junctions