Chin. Phys. B
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Chin. Phys. B  2017, Vol. 26 Issue (4): 047306    DOI: 10.1088/1674-1056/26/4/047306
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Improvement of reverse blocking performance in vertical power MOSFETs with Schottky-drain-connected semisuperjunctions
Wei Mao(毛维)1, Hai-Yong Wang(王海永)1, Xiao-Fei Wang(王晓飞)2, Ming Du(杜鸣)1, Jin-Feng Zhang(张金风)1, Xue-Feng Zheng(郑雪峰)1, Chong Wang(王冲)1, Xiao-Hua Ma(马晓华)1, Jin-Cheng Zhang(张进成)1, Yue Hao(郝跃)1
1 Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
2 Xian Aerosemi Technology Co., LTD, Xi'an 710077, China

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