Improvement of reverse blocking performance in vertical power MOSFETs with Schottky-drain-connected semisuperjunctions

doi:10.1088/1674-1056/26/4/047306

Abstract To enhance the reverse blocking capability with low specific on-resistance, a novel vertical metal-oxide-semiconductor field-effect transistor (MOSFET) with a Schottky-drian (SD) and SD-connected semisuperjunctions (SD-D-semi-SJ), named as SD-D-semi-SJ MOSFET is proposed and demonstrated by two-dimensional (2D) numerical simulations. The SD contacted with the n-pillar exhibits the Schottky-contact property, and that with the p-pillar the Ohmic-contact property. Based on these features, the SD-D-semi-SJ MOSFET could obviously overcome the great obstacle of the ineffectivity of the conventional superjunctions (SJ) or semisuperjunctions (semi-SJ) for the reverse applications and achieve a satisfactory trade-off between the reverse breakdown voltage (BV) and the specific on-resistance (R_onA). For a given pillar width and n-drift thickness, there exists a proper range of n-drift concentration (N), in which the SD-D-semi-SJ MOSFET could exhibit a better trade-off of R_onA-BV compared to the predication of SJ MOSFET in the forward applications. And what is much valuable, in this proper range of N, the desired BV and good trade-off could be achieved only by determining the pillar thickness, with the top assist layer thickness unchanged. Detailed analyses have been carried out to get physical insights into the intrinsic mechanism of R_onA-BV improvement in SD-D-semi-SJ MOSFET. These results demonstrate a great potential of SD-D-semi-SJ MOSFET in reverse applications.

Keywords: vertical MOSFET Schottky-drain-connected semisuperjunction (SD-D-semi-SJ) reverse blocking specific on-resistance

Received: 14 December 2016
Revised: 03 February 2017
Accepted manuscript online:

PACS:	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	85.30.Tv	(Field effect devices)
	85.30.De	(Semiconductor-device characterization, design, and modeling)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61574112, 61334002, 61306017, 61474091, and 61574110) and the Natural Science Basic Research Plan in Shaanxi Province of China (Grant No. 605119425012).

Corresponding Authors: Xiao-Fei Wang
E-mail: xjtuwxf@126.com

Cite this article:

Wei Mao(毛维), Hai-Yong Wang(王海永), Xiao-Fei Wang(王晓飞), Ming Du(杜鸣), Jin-Feng Zhang(张金风), Xue-Feng Zheng(郑雪峰), Chong Wang(王冲), Xiao-Hua Ma(马晓华), Jin-Cheng Zhang(张进成), Yue Hao(郝跃) Improvement of reverse blocking performance in vertical power MOSFETs with Schottky-drain-connected semisuperjunctions 2017 Chin. Phys. B 26 047306

[1]	Chen X B 1993 U.S. Patent 5 216 275
[2]	Fujihira T 1997 Jpn. J. Appl. Phys. 36 6254
[3]	Saito W, Omura I, Aida S, Koduki S, Izumisawa M and Ogura T 2003 IEEE Trans. Electron Dev. 50 1801
[4]	Srikanth S and Karmalkar S 2008 IEEE Trans. Electron Dev. 55 3562
[5]	Ye H and Haldar P 2008 IEEE Trans. Electron Dev. 55 2246
[6]	Chen Y, Liang Y C, Samudra G S, Yang X, Buddharaju K D and Feng H H 2008 IEEE Trans. Electron Dev. 55 211
[7]	Napoli E, Wang H and Udrea F 2008 IEEE Electron Dev. Lett. 29 249
[8]	Tamaki T, Nakazawa Y, Kanai H, Abiko Y, Ikegami Y, Ishikawa M, Wakimoto E, Yasuda T and Eguchi S 2011 Proceedings of the 23rd International Symosium on Power Semiconductor Devices and ICs, May, 2011, San Diego, CA, USA, pp. 308-311
[9]	Huang H M and Chen X B 2013 IEEE Trans. Electron Dev. 60 1195
[10]	Lyu X J and Chen X B 2013 IEEE Trans. Electron Dev. 60 1709
[11]	Lin Z, Huang H M and Chen X B 2015 IEEE Trans. Electron Dev. 62 228
[12]	Zhang W T, Zhang B, Li Z H, Qiao M and Li Z J 2015 IEEE Trans. Electron Dev. 62 4114
[13]	Murari B, Bertotti F and Vignola G A 2002 Smart Power ICs, 2nd edn. pp. 184-88
[14]	Leberer R, Reber R and Oppermann M 2008 IEEE MTT-S International Microwave Symposium Digest, June 15-20, 2008, Atlanta, GA, p. 85
[15]	Huang W and Chow T P 2007 Proceedings of the 19th Inernational Symposium on Power Semiconductor Devices and ICs, pp. 265-268
[16]	Nagai S, Yamada Y, Negoro N, Handa H, Hiraiwa M, Otsuka N and Ueda D 2015 IEEE Journal of the Electron Devices Society 3 7
[17]	Bahat-Treidel E, Lossy R, Wurfl J and Trankle G 2009 IEEE Electron Dev. Lett. 30 901
[18]	Zhou C H, Chen W, Piner E L and Chen K J 2010 IEEE Electron Dev. Lett. 31 668
[19]	Zhao S L, Mi M H, Hou B, Luo J, Wang Y, Dai Y, Zhang J C, Ma X H and Hao Y 2014 Chin. Phys. B 23 107303
[20]	Atlas User's Manual 2015, Silvaco, Inc., Santa Clara, CA USA
[21]	Hu C 1979 IEEE Trans. Electron Dev. 26 243

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Improvement of reverse blocking performance in vertical power MOSFETs with Schottky-drain-connected semisuperjunctions

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