Mechanism of improving forward and reverse blocking voltages in AlGaN/GaN HEMTs by using Schottky drain

doi:10.1088/1674-1056/23/10/107303

Abstract In this paper, we demonstrate that a Schottky drain can improve the forward and reverse blocking voltages (BVs) simultaneously in AlGaN/GaN high-electron mobility transistors (HEMTs). The mechanism of improving the two BVs is investigated by analysing the leakage current components and by software simulation. The forward BV increases from 72 V to 149 V due to the good Schottky contact morphology. During the reverse bias, the buffer leakage in the Ohmic-drain HEMT increases significantly with the increase of the negative drain bias. For the Schottky-drain HEMT, the buffer leakage is suppressed effectively by the formation of the depletion region at the drain terminal. As a result, the reverse BV is enhanced from -5 V to -49 V by using a Schottky drain. Experiments and the simulation indicate that a Schottky drain is desirable for power electronic applications.

Keywords: AlGaN/GaN high-electron mobility transistors (HEMTs) forward blocking voltage reverse blocking voltage Schottky drain

Received: 03 January 2014
Revised: 17 April 2013
Accepted manuscript online:

PACS:	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	73.61.Ey	(III-V semiconductors)
	78.30.Fs	(III-V and II-VI semiconductors)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61334002 and 61106106) and the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory, China (Grant No. ZHD201206).

Corresponding Authors: Hao Yue
E-mail: yhao@xidian.edu.cn

About author: 73.40.Kp; 73.61.Ey; 78.30.Fs

Cite this article:

Zhao Sheng-Lei (赵胜雷), Mi Min-Han (宓珉瀚), Hou Bin (侯斌), Luo Jun (罗俊), Wang Yi (王毅), Dai Yang (戴杨), Zhang Jin-Cheng (张进成), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) Mechanism of improving forward and reverse blocking voltages in AlGaN/GaN HEMTs by using Schottky drain 2014 Chin. Phys. B 23 107303


[13]	Krieble K, Lo C C H, Melikhov Y and Snyder J E 2006 J. Appl. Phys. 99 08M912

[1]	Yang L, Hu G Z, Hao Y, Ma X H, Quan S, Yang L Y and Jiang S G 2010 Chin. Phys. B 19 047301

[2]	Zhao S L, Zhang K, Ha W, Chen Y H, Zhang P, Zhang J C, Ma X H and Hao Y 2013 Appl. Phys. Lett. 103 212106

[14]	Magalhães F, Pereira M C, Botrel S E C, Fabris J D, Macedo W A, Mendonca R, Lago R M and Oliveira L C A 2007 Appl. Catal. A-Gen. 332 115

[3]	Xing H, Dora Y, Chini A, Heikman S, Keller S and Mishra U K 2004 IEEE Electron Dev. Lett. 25 161

[4]	Mao W, Yang C, Hao Y, Zhang J C, Liu H X, Bi Z W, Xu S R, Xue J S, Ma X H, Wang C, Yang L A, Zhang J F and Kuang X W 2011 Chin. Phys. B 20 017203

[15]	Yunus S M, Azad A K, Eriksson S G, Eriksen J, Rundlöf H and Mathieu R 2003 Physica B 337 323

[16]	Tang G D, Hou D L, Chen W, Zhao X and Qi W H 2007 Appl. Phys. Lett. 90 144101

[5]	Baliga B J 2013 Semicond. Sci. Technol. 28 074011

[6]	Huang W and Chow T P 2007 Proc. ISPSD (The 19th International Symposium on Power Semiconductor Devices and ICs), May 27-31, 2007, Jeju, Korea, p. 265

[17]	Tang G D, Ji D H, Yao Y X, Liu S P, Li Z Z, Qi W H, Han Q J, Hou X and Hou D L 2011 Appl. Phys. Lett. 98 072511

[7]	Morita T et al. 2007 IEDM Tech. Dig. p. 865

[8]	Bahat-Treidel E, Lossy R, Würfl J and Tränkle G 2009 IEEE Electron Dev. Lett. 30 901

[9]	Lu B, Piner E L and Palacios T 2010 IEEE Electron Dev. Lett. 31 302

[10]	Kunihiro K, Kasahara K, Takahashi Y and Ohno Y 1999 IEEE Electron Dev. Lett. 20 608

[11]	Lin S, Kuo C, Liu X, Liang L, Cheng C, Lin C, Tang S, Chang L, Chen C and Gwo S 2012 Appl. Phys. Express 5 031003

[18]	Han Q J, Ji D H, Tang G D, Li Z Z, Hou X, Qi W H, Liu S R and Bian R R 2012 J. Magn. Magn. Mater. 324 1975

[12]	Bermudez V M, Wu C I and Kahn A 2001 J. Appl. Phys. 89 1991

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Mechanism of improving forward and reverse blocking voltages in AlGaN/GaN HEMTs by using Schottky drain

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