Reverse blocking enhancement of drain field plate in Schottky-drain AlGaN/GaN high-electron mobility transistors

doi:10.1088/1674-1056/23/9/097305

Abstract In this paper, we present the combination of drain field plate (FP) and Schottky drain to improve the reverse blocking capability, and investigate the reverse blocking enhancement of drain FP in Schottky-drain AlGaN/GaN high-electron mobility transistors (HEMTs). Drain FP and gate FP were employed in a two-dimensional simulation to improve the reverse blocking voltage (V_RB) and the forward blocking voltage (V_FB). The drain-FP length, the gate-FP length and the passivation layer thickness were optimized. V_RB and V_FB were improved from-67 V and 134 V to-653 V and 868 V respectively after optimization. Simulation results suggest that the combination of drain FP and Schottky drain can enhance the reverse blocking capability significantly.

Keywords: AlGaN/GaN high-electron mobility transistors reverse blocking capability drain field plate Schottky drain

Received: 02 January 2014
Revised: 21 March 2014
Accepted manuscript online:

PACS:	73.40.Kp	(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	73.61.Ey	(III-V semiconductors)
	78.30.Fs	(III-V and II-VI semiconductors)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61334002 and 61106106) and the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory, China (Grant No. ZHD201206).

Corresponding Authors: Hao Yue
E-mail: yhao@xidian.edu.cn

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Zhao Sheng-Lei (赵胜雷), Wang Yuan (王媛), Yang Xiao-Lei (杨晓蕾), Lin Zhi-Yu (林志宇), Wang Chong (王冲), Zhang Jin-Cheng (张进成), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) Reverse blocking enhancement of drain field plate in Schottky-drain AlGaN/GaN high-electron mobility transistors 2014 Chin. Phys. B 23 097305

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Reverse blocking enhancement of drain field plate in Schottky-drain AlGaN/GaN high-electron mobility transistors

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