Chin. Phys. B
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Chin. Phys. B  2017, Vol. 26 Issue (3): 038501    DOI: 10.1088/1674-1056/26/3/038501
TOPICAL REVIEW---2D materials: physics and device applications Current Issue| Next Issue| Archive| Adv Search |
Graphene resistive random memory–the promising memory device in next generation
Xue-Feng Wang(王雪峰)1,2, Hai-Ming Zhao(赵海明)1,2, Yi Yang(杨轶)1,2, Tian-Ling Ren(任天令)1,2
1 Institute of Microelectronics, Tsinghua University, Beijing 100084, China;
2 Tsinghua National Laboratory for Information Science and Technology(TNList), Tsinghua University, Beijing 100084, China

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