Chin. Phys. B
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Chin. Phys. B  2016, Vol. 25 Issue (10): 108102    DOI: 10.1088/1674-1056/25/10/108102
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Current Issue| Next Issue| Archive| Adv Search |
Electric-field-dependent charge delocalization from dopant atoms in silicon junctionless nanowire transistor
Hao Wang(王昊)1, Wei-Hua Han(韩伟华)1, Xiao-Song Zhao(赵晓松)1, Wang Zhang(张望)1, Qi-Feng Lyu(吕奇峰)1, Liu-Hong Ma(马刘红)1,2, Fu-Hua Yang(杨富华)1,2
1 Engineering Research Center for Semiconductor Integration Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 State Key Laboratory for Superlattices and Microstructures, Beijing 100083, China

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