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Electric-field-dependent charge delocalization from dopant atoms in silicon junctionless nanowire transistor |
| Hao Wang(王昊)1, Wei-Hua Han(韩伟华)1, Xiao-Song Zhao(赵晓松)1, Wang Zhang(张望)1, Qi-Feng Lyu(吕奇峰)1, Liu-Hong Ma(马刘红)1,2, Fu-Hua Yang(杨富华)1,2 |
1 Engineering Research Center for Semiconductor Integration Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 State Key Laboratory for Superlattices and Microstructures, Beijing 100083, China |
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Abstract We study electric-field-dependent charge delocalization from dopant atoms in a silicon junctionless nanowire transistor by low-temperature electron transport measurement. The Arrhenius plot of the temperature-dependent conductance demonstrates the transport behaviors of variable-range hopping (below 30 K) and nearest-neighbor hopping (above 30 K). The activation energy for the charge delocalization gradually decreases due to the confinement potential of the conduction channel decreasing from the threshold voltage to the flatband voltage. With the increase of the source-drain bias, the activation energy increases in a temperature range from 30 K to 100 K at a fixed gate voltage, but decreases above the temperature of 100 K.
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Received: 31 March 2016
Revised: 31 May 2016
Accepted manuscript online:
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PACS:
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81.07.Ta
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(Quantum dots)
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94.20.Ss
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(Electric fields; current system)
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81.07.Gf
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(Nanowires)
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85.30.Tv
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(Field effect devices)
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| Fund: Project supported partly by the National Key R & D Program of China (Grant No. 2016YFA02005003) and the National Natural Science Foundation of China (Grant Nos. 61376096 and 61327813). |
Corresponding Authors:
Wei-Hua Han, Fu-Hua Yang
E-mail: weihua@semi.ac.cn;fhyang@semi.ac.cn
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Cite this article:
Hao Wang(王昊), Wei-Hua Han(韩伟华), Xiao-Song Zhao(赵晓松), Wang Zhang(张望), Qi-Feng Lyu(吕奇峰), Liu-Hong Ma(马刘红), Fu-Hua Yang(杨富华) Electric-field-dependent charge delocalization from dopant atoms in silicon junctionless nanowire transistor 2016 Chin. Phys. B 25 108102
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