Chin. Phys. B
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Chin. Phys. B  2016, Vol. 25 Issue (7): 077201    DOI: 10.1088/1674-1056/25/7/077201
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Improving breakdown voltage performance of SOI power device with folded drift region
Qi Li(李琦)1, Hai-Ou Li(李海鸥)2, Ping-Jiang Huang(黄平奖)2, Gong-Li Xiao(肖功利)3, Nian-Jiong Yang(杨年炯)4
1 Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, China;
2 Guangxi Key Laboratory of Wireless Wideband Communication and Signal Processing, Guilin University of Electronic Technology, Guilin 541004, China;
3 Guangxi Experiment Center of Information Science, Guilin 541004, China;
4 Guangxi Key Laboratory of Automobile Components and Vehicle Technology, Guangxi University of Science and Technology, Liuzhou 545006, China

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