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Chin. Phys. B, 2016, Vol. 25(2): 027702    DOI: 10.1088/1674-1056/25/2/027702
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Improvement in electrical properties of high-κfilm on Ge substrate by an improved stress relieved pre-oxide method

Ji-Bin Fan(樊继斌)1,2, Xiao-Fu Ding(丁晓甫)1, Hong-Xia Liu(刘红侠)2, Peng-Fei Xie(谢鹏飞)1, Yuan-Tao Zhang(张袁涛)1, Qing-Liang Liao(廖清良)1
1. School of Materials Science and Engineering, Chang'an University, Xi'an 710061, China;
2. School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
Abstract  High-κ/Ge gate stack has recently attracted a great deal of attention as a potential candidate to replace planar silicon transistors for sub-22 generation. However, the desorption and volatilization of GeO hamper the development of Ge-based devices. To cope with this challenge, various techniques have been proposed to improve the high-κ/Ge interface. However, these techniques have not been developed perfectly yet to control the interface. Therefore, in this paper, we propose an improved stress relieved pre-oxide (SRPO) method to improve the thermodynamic stability of the high-κ/Ge interface. The x-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) results indicate that the GeO volatilization of the high-κ/Ge gate stack is efficiently suppressed after 500 ℃ annealing, and the electrical characteristics are greatly improved.
Keywords:  high-κfilm      GeO volatilization      stress relieved pre-oxide      annealing  
Received:  11 July 2015      Revised:  28 September 2015      Accepted manuscript online: 
PACS:  77.55.D-  
  82.80.Pv (Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.))  
Corresponding Authors:  Ji-Bin Fan     E-mail:  jbfan@chd.edu.cn

Cite this article: 

Ji-Bin Fan(樊继斌), Xiao-Fu Ding(丁晓甫), Hong-Xia Liu(刘红侠), Peng-Fei Xie(谢鹏飞), Yuan-Tao Zhang(张袁涛), Qing-Liang Liao(廖清良) Improvement in electrical properties of high-κfilm on Ge substrate by an improved stress relieved pre-oxide method 2016 Chin. Phys. B 25 027702

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