Fabrication and electrical properties of axial and radial GaAs nanowire pn junction diode arrays

doi:10.1088/1674-1056/23/12/128503

Abstract We report on the fabrications and characterizations of axial and radial GaAs nanowire pn junction diode arrays. The nanowires are grown on n-doped GaAs (111)B substrates using the Au-catalyzed vapor–liquid–solid mechanism by metal–organic chemical vapor deposition (MOCVD). Diethyl–zinc and silane are used as p- and n-type dopant precursors, respectively. Both the axial and radial diodes exhibit diode-like J–V characteristics and have similar performances under forward bias. Under backward bias, the axial diode has a large leakage current, which is attributed to the bending of the pn junction interface induced by two doping mechanisms in Au-catalyzed nanowires. The low leakage current and high rectification ratio make the radial diode more promising in electrical and optoelectronic devices.

Keywords: pn junction diode GaAs nanowire MOCVD

Received: 11 March 2014
Revised: 17 May 2014
Accepted manuscript online:

PACS:	85.30.Kk	(Junction diodes)
	81.07.-b	(Nanoscale materials and structures: fabrication and characterization)
	81.07.Gf	(Nanowires)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61376019 and 61020106007), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20120005110011), the Natural Science Foundation of Beijing (Grant No. 4142038), the 111 Program of China (Grant No. B07005), and the Fund of the State Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications).

Corresponding Authors: Zhang Xia
E-mail: xzhang@bupt.edu.cn

Cite this article:

Li Jun-Shuai (李军帅), Zhang Xia (张霞), Yan Xin (颜鑫), Chen Xiong (陈雄), Li Liang (李亮), Cui Jian-Gong (崔建功), Huang Yong-Qing (黄永清), Ren Xiao-Min (任晓敏) Fabrication and electrical properties of axial and radial GaAs nanowire pn junction diode arrays 2014 Chin. Phys. B 23 128503


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Fabrication and electrical properties of axial and radial GaAs nanowire pn junction diode arrays

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