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Chin. Phys. B, 2014, Vol. 23(12): 128504    DOI: 10.1088/1674-1056/23/12/128504
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Enhanced light emission from InGaN/GaN quantum wells by using surface plasmonic resonances of silver nanoparticle array

Chen Zhan-Xu (陈湛旭)a b, Wan Wei (万巍)a, Zhang Bai-Jun (张佰君)b, He Ying-Ji (何影记)a, Jin Chong-Jun (金崇君)b
a School of Electronic and Information, Guangdong Polytechnic Normal University, Guangzhou 510665, China;
b State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275, China
Abstract  The effect of silver nanostructures prepared by nanosphere lithography on the photoluminescence (PL) properties of blue-emitting InGaN/GaN quantum wells (QWs) is studied. Arrays of silver nanoparticles are fabricated to yield a collective surface plasmonic resonance (SPR) near to the QWs emission wavelength. A large enhancement in peak PL intensity is observed, when the induced SPR wavelength of the nanoparticles on the QWs sample matches the QWs emission wavelength. The study proves that the SPRs could enhance the light emission efficiency of semiconductor material.
Keywords:  light-emitting devices      photoluminescence      metallic nanoparticle      nanosphere lithography  
Received:  03 June 2014      Revised:  10 September 2014      Accepted manuscript online: 
PACS:  85.60.Jb (Light-emitting devices)  
  78.55.-m (Photoluminescence, properties and materials)  
  78.67.Bf (Nanocrystals, nanoparticles, and nanoclusters)  
  81.16.Nd (Micro- and nanolithography)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 10774195, U0834001, 10974263, 11174374, 11174061, and 10725420), the Key Program of Ministry of Education, China (Grant No. 309024), the New Century Excellent Talents in University, the National Basic Research Program of China (Grant No. 2010CB923200), and the Natural Science Foundation of Guangdong Province, China (Grant No. S2013010015795).
Corresponding Authors:  Chong-Jun     E-mail:  jinchjun@mail.sysu.edu.cn

Cite this article: 

Chen Zhan-Xu (陈湛旭), Wan Wei (万巍), Zhang Bai-Jun (张佰君), He Ying-Ji (何影记), Jin Chong-Jun (金崇君) Enhanced light emission from InGaN/GaN quantum wells by using surface plasmonic resonances of silver nanoparticle array 2014 Chin. Phys. B 23 128504

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